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參數(shù)資料
| 型號： | LM3146N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | .82 UF/400VDC METAL POLY CAP |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 151K |
| 代理商： | LM3146N |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
LM3146
Units
Power Dissipation: Each transistor
T
A
e
25
§
C to 55
§
C
T
A
l
55
§
C
Power Dissipation: Total Package
T
A
e
25
§
C
T
A
l
25
§
C
Collector to Emitter Voltage, V
CEO
Collector to Base Voltage, V
CBO
Collector to Substrate Voltage,
V
CIO
(Note 1)
Emitter to Base Voltage, V
EBO
(Note 2)
300
mW
mW/
§
C
Derate at 6.67
500
mW
mW/
§
C
V
Derate at 6.67
30
40
V
40
V
5
V
Collector to Current, I
C
Operating Temperature Range
50
mA
§
C
§
C
b
40 to
a
85
b
65 to
a
150
Storage Temperature Range
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260
§
C
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
215
§
C
220
§
C
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering sur-
face mount devices.
DC Electrical Characteristics
T
A
e
25
§
C
Symbol
Parameter
Conditions
Limits
Units
Min
Typ
Max
V
(BR)CBO
Collector to Base Breakdown Voltage
I
C
e
10
m
A, I
E
e
0
40
72
V
V
(BR)CEO
Collector to Emitter Breakdown Voltage
I
C
e
1 mA, I
B
e
0
30
56
V
V
(BR)CIO
Collector to Substrate Breakdown
Voltage
I
CI
e
10
m
A, I
B
e
0,
I
E
e
0
40
72
V
V
(BR)EBO
Emitter to Base Breakdown Voltage
(Note 2)
I
C
e
0, I
E
e
10
m
A
5
7
V
I
CBO
Collector Cutoff Current
V
CB
e
10V, I
E
e
0
0.002
100
nA
I
CEO
Collector Cutoff Current
V
CE
e
10V, I
B
e
0
(Note 3)
5
m
A
h
FE
Static Forward Current Transfer
Ratio (Static Beta)
I
C
e
10 mA, V
CE
e
5V
I
C
e
1 mA, V
CE
e
5V
I
C
e
10
m
A, V
CE
e
5V
85
100
90
30
I
B1
–I
B2
Input Offset Current for Matched
Pair Q1 and Q2
I
C1
e
1
C2
e
1 mA,
V
CE
e
5V
0.3
2
m
A
V
BE
Base to Emitter Voltage
I
C
e
1 mA, V
CE
e
3V
0.63
0.73
0.83
V
V
BE1
–V
BE2
Magnitude of Input Offset Voltage
for Differential Pair
V
CE
e
5V, I
E
e
1 mA
0.48
5
mV
D
V
BE
/
D
T
Temperature Coefficient of Base
to Emitter Voltage
V
CE
e
5V, I
E
e
1 mA
b
1.9
mV/
§
C
V
CE(SAT)
Collector to Emitter Saturation
Voltage
I
C
e
10 mA, I
B
e
1 mA
0.33
V
D
V
10
/
D
T
Temperature Coefficient of Input
Offset Voltage
I
C
e
1 mA, V
CE
e
5V
1.1
m
V/
§
C
Note 1:
The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors,
the substrate terminal should be maintained at either dc or signal (ac) ground. A suitable bypass capacitor can be used to establish a signal ground.
Note 2:
(BR)EBO
), degradation of forward transfer current ratio (h
FE
) can occur.
Note 3:
See curve.
2
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