參數(shù)資料
型號: LM3475
廠商: National Semiconductor Corporation
英文描述: Hysteretic PFET Buck Controller
中文描述: 遲滯PFET的降壓控制器
文件頁數(shù): 3/14頁
文件大?。?/td> 305K
代理商: LM3475
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN
PGATE
FB
EN
Storage Temperature
Power Dissipation (Note 2)
ESD Susceptibilty
Human Body Model (Note 3)
0.3V to 16V
0.3V to 16V
0.3V to 5V
0.3V to 16V
65C to 150C
440mW
2.5kV
Lead Temperature
Vapor Phase (60 sec.)
Infared (15 sec.)
215C
220C
Operating Ratings
(Note 1)
Supply Voltage
Operating Junction
Temperature
2.7V to 10V
40C to +125C
Electrical Characteristics
Specifications in Standard type face are for T
J
= 25C, and in
bold type face
apply over the full
Operating Temperature
Range
(T
J
= 40C to +125C). Unless otherwise specified, V
IN
= EN = 5.0V. Datasheet min/max specification limits are guar-
anteed by design, test, or statistical analysis.
Symbol
Parameter
Quiescent Current
Conditions
EN = V
IN
(PGATE
Open)
EN = 0V
Min
Typ
Max
Unit
I
Q
170
260
320
μA
4
7
10
V
FB
%
V
FB
/
V
IN
Feedback Voltage
Feedback Voltage
Line Regulation
Comparator
Hysteresis
FB Bias Current
Enable Threshold
Voltage
Hysteresis
Enable Leakage
Current
0.788
0.8
0.812
V
2.7V
<
V
IN
<
10V
0.01
%/V
V
HYST
2.7V
<
V
IN
<
10V
40C to +125C
21
21
50
28
32
600
mV
I
FB
nA
Vth
EN
Increasing
1.2
1.5
1.8
V
365
mV
I
EN
EN = 10V
.025
1
μA
R
PGATE
Driver Resistance
Source
I
SOURCE
= 100mA
Sink
I
Sink
= 100mA
Source
V
PGATE
= 3.5V
C
PGATE
= 1nF
Sink
V
PGATE
= 3.5V
C
PGATE
= 1nF
2.7V
<
V
IN
<
10V
(EN Rising)
PGATE Open
Measured at the FB
Pin
2.8
1.8
I
PGATE
Driver Output Current
0.475
A
1.0
T
SS
Soft-Start Time
4
ms
T
ONMIN
V
UVD
Minimum On-Time
Under Voltage
Detection
180
ns
0.487
0.56
0.613
V
L
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