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參數(shù)資料
| 型號(hào)： | LM358MX |
| 廠商： | Rohm Semiconductor |
| 文件頁(yè)數(shù)： | 7/20頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP DUAL 32V 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | 現(xiàn)在 |
| 放大器類型： | 通用 |
| 電路數(shù)： | 2 |
| 電流 - 輸入偏壓： | 45nA |
| 電壓 - 輸入偏移： | 2000µV |
| 電流 - 電源： | 1mA |
| 電流 - 輸出 / 通道： | 40mA |
| 電壓 - 電源，單路/雙路(±)： | 3 V ~ 32 V，±1.5 V ~ 16 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 產(chǎn)品目錄頁(yè)面： | 1377 (CN2011-ZH PDF) |
| 其它名稱： | LM358MXRDKR |
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Technical Note
15/17
LM358MX,LM2904MX,LM324MX,LM324MTX,LM2902MX
www.rohm.com
2011.06 - Rev.C
2011 ROHM Co., Ltd. All rights reserved.
NOW SERIES LM2904/2902/358/324 family
●Derating curves
Power Dissipation
Package
Pd[W]
θja [℃/W]
Package
Pd[W]
θja [℃/W]
SO package8 (*8)
450
3.6
SO package14
610
4.9
TSSOP14
870
7.0
●Precautions
1) Unused circuits
When there are unused circuits, it is recommended that they be connected as in Fig.103,
setting the non-inverting input terminal to a potential within the
in-phase input voltage range (VICR).
2) Input terminal voltage
Applying GND + 32V to the input terminal is possible without causing deterioration of the
electrical characteristics or destruction, irrespective of the supply voltage. However, this does not ensure
normal circuit operation.
Please note that the circuit operates normally only when the input voltage is within the common mode
input voltage range of the electric characteristics.
3) Power supply (single / dual)
The op-amp operates when the voltage supplied is between V
+ and GND
Therefore, the single supply op-mp can be used as a dual supply op-amp as well.
4) Power dissipation (Pd)
Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to the rise in chip temperature, including
reduced current capability. Therefore, please take into consideration the power dissipation (Pd) under actual operating conditions and apply a sufficient
margin in thermal design. Refer to the thermal derating curves for more information.
5) Short-circuit between pins and erroneous mounting
Incorrect mounting may damage the IC. In addition, the presence of foreign substances between the outputs, the output and the power supply, or the
output and GND may result in IC destruction.
6) Operation in a strong electromagnetic field
Operation in a strong electromagnetic field may cause malfunctions.
7) Radiation
This IC is not designed to withstand radiation.
8) IC handing
Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuation of the electrical characteristics due to piezoelectric (piezo)
effects.
9) IC operation
The output stage of the IC is configured using Class C push-pull circuits. Therefore, when the load resistor is connected to the middle potential of V
+ and
GND, crossover distortion occurs at the changeover between discharging and charging of the output current. Connecting a resistor between the output
terminal and GND, and increasing the bias current for Class A operation will suppress crossover distortion.
10) Board inspection
Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every process is recommended. In
addition, when attaching and detaching the jig during the inspection phase, ensure that the power is turned OFF before inspection and removal.
Furthermore, please take measures against ESD in the assembly process as well as during transportation and storage.
11) Output capacitor
Discharge of the external output capacitor to V
+ is possible via internal parasitic elements when V+ is shorted to GND, causing damage to the internal
circuitry due to thermal stress. Therefore, when using this IC in circuits where oscillation due to output capacitive load does not occur, such as in voltage
comparators, use an output capacitor with a capacitance less than 0.1μF.
0
200
400
600
800
1000
0
25
50
75
100
AMBIENT TEMPERATURE [℃]
P
O
W
E
R
D
ISSIP
A
T
IO
N
P
d
[m
W
]
0
200
400
600
800
0
25
50
75
100
AMBIENT TEMPERATURE
[℃]
P
O
W
E
R
D
ISSIP
A
T
IO
N
P
d
[m
W
]
Fig.102 Derating Curves
Fig.103 Disable circuit example
connect
to V icm
V +
GND
－
＋
LM358MX, LM2904MX
LM324MX/MTX, LM2902MX
70
LM2904MX
LM324MTX
LM2902MX
70
LM358MX
LM324MX
85
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM358MX | 制造商:Fairchild Semiconductor Corporation 功能描述:IC SM OP-AMP DUAL LOW POWER 制造商:Fairchild Semiconductor Corporation 功能描述:IC, OP-AMP, 0.6V/ us, SOIC-8 |
| LM358MX/NOPB | 功能描述:運(yùn)算放大器 - 運(yùn)放 LOW PWR DUAL OP AMP RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LM358MX_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:NOW SERIES Operational Amplifiers |
| LM358MX-CUT TAPE | 制造商:FAIRCHILD 功能描述:LM358 Series 7 mV Input Offset Dual Operational Amplifier - SOIC-8 |
| LM358MXNOPB | 制造商:Texas Instruments 功能描述: |
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