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參數(shù)資料
| 型號(hào)： | LM4040 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Precision Micropower Shunt Voltage Reference |
| 中文描述： | 改進(jìn)的、精密微功耗并聯(lián)型電壓基準(zhǔn)，帶有多種反向擊穿電壓 |
| 文件頁(yè)數(shù)： | 10/39頁(yè) |
| 文件大?。?/td> | 482K |
| 代理商： | LM4040 |
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LM4040x20Q Electrical Characteristics
at extended temperature range, full-range T
A
= –40
°
C to 125
°
C (unless otherwise noted)
V
Z
I
Z
LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SLOS456I–JANUARY 2005–REVISED DECEMBER 2005
LM4040C20Q
MIN
2.048
–10
–30
LM4040D20Q
MIN
2.048
–20
–50
PARAMETER
TEST CONDITIONS
T
A
UNIT
TYP
MAX
TYP
MAX
V
Z
Reverse breakdown voltage
I
Z
= 100
μ
A
25
°
C
25
°
C
V
10
30
75
80
20
50
75
80
Reverse breakdown voltage
tolerance
V
Z
I
Z
= 100
μ
A
mV
Full range
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
Full range
45
45
I
Z,min
Minimum cathode current
μ
A
I
Z
= 10 mA
±
20
±
15
±
20
±
15
Average temperature coefficient
of reverse breakdown voltage
α
VZ
I
Z
= 1 mA
ppm/
°
C
±
100
±
150
I
Z
= 100
μ
A
±
15
0.3
±
15
0.3
0.8
1
I
Z,min
< I
Z
< 1 mA
Reverse breakdown voltage
change with cathode current
change
1
6
8
1.2
mV
2.5
2.5
8
1 mA < I
Z
< 15 mA
10
I
Z
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
Z
I
= 100
μ
A,
10 Hz
≤
f
≤
10 kHz
t = 1000 h,
T
A
= 25
°
C
±
0.1
°
C,
I
Z
= 100
μ
A
T
A
= –40
°
C to 125
°
C
Z
Z
Reverse dynamic impedance
25
°
C
0.3
0.9
0.3
1.1
e
N
Wideband noise
25
°
C
35
35
μ
V
RMS
Long-term stability of reverse
breakdown voltage
120
120
ppm
V
HYST
Thermal hysteresis
(1)
0.08
0.08
%
(1)
Thermal hysteresis is defined as V
Z,25
°
C
(after cycling to –40
°
C) – V
Z,25
°
C
(after cycling to 125
°
C).
10
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