參數(shù)資料
型號: LM4051
廠商: National Semiconductor Corporation
英文描述: Precision Micropower Shunt Voltage Reference
中文描述: 50ppm/°C、高精度、微功耗并聯(lián)型電壓基準,提供多種反向擊穿電壓
文件頁數(shù): 3/14頁
文件大?。?/td> 301K
代理商: LM4051
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Maximum Output Voltage
(LM4051-ADJ)
Power Dissipation (T
A
= 25C) (Note 2)
M3 Package
Storage Temperature
Lead Temperature
M3 Packages
Vapor phase (60 seconds)
Infrared (15 seconds)
20 mA
10 mA
15V
280 mW
65C to +150C
+215C
+220C
ESD Susceptibility
Human Body Model (Note 3)
Machine Model (Note 3)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
2 kV
200V
Operating Ratings
(Notes 1, 2)
Temperature Range
Industrial Temperature Range
Reverse Current
LM4051-1.2
LM4051-ADJ
Output Voltage Range
LM4051-ADJ
(T
min
T
A
T
max
)
40C
T
A
+85C
60 μA to 12 mA
60 μA to 12 mA
1.24V to 10V
LM4051-1.2
Electrical Characteristics
Boldface limits apply for T
= T
= T
MIN
to T
MAX
;
all other limits T
= T
= 25C. The grades A, B and C designate initial Re-
verse Breakdown Voltage tolerances of
0.1%,
0.2% and
±
0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4051AIM3
(Limits)
(Note 5)
LM4051BIM3
(Limits)
(Note 5)
LM4051CIM3
Limts
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage
Tolerance (Note 6)
Minimum Operating
Current
I
R
= 100 μA
1.225
V
I
R
= 100 μA
±
1.2
±
2.4
±
6
mV (max)
±
5.2
±
6.4
±
10.1
mV (max)
μA
μA (max)
μA (max)
ppm/C
ppm/C
ppm/C
(max)
mV
mV (max)
mV (max)
mV
mV (max)
mV (max)
I
RMIN
39
60
65
60
65
60
65
V
R
/
T
Average Reverse
Breakdown
Voltage Temperature
Coefficient (Note 6)
I
R
= 10 mA
I
R
= 1 mA
I
R
= 100 μA
T = 40C to 125C
I
RMIN
I
R
1 mA
±
20
±
15
±
15
±
50
±
50
±
50
V
R
/
I
R
Reverse Breakdown
Voltage
Change with Operating
Current Change
0.3
1.1
1.5
1.1
1.5
1.1
1.5
1 mA
I
R
12 mA
1.8
6.0
8.0
6.0
8.0
6.0
8.0
Z
R
Reverse Dynamic
Impedance
I
R
= 1 mA, f = 120 Hz
0.5
e
N
Wideband Noise
I
R
= 100 μA
10 Hz
f
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 100 μA
20
μV
rms
V
R
Reverse Breakdown
Voltage
Long Term Stability
(Note 9)
Output Hysteresis
(Note 10)
120
ppm
V
HYST
T = 40C to 125C
0.36
mV/V
L
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