參數(shù)資料
型號(hào): LM4663MTX/NOPB
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 音頻/視頻放大
英文描述: 2.1 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
封裝: TSSOP-24
文件頁數(shù): 3/10頁
文件大小: 605K
代理商: LM4663MTX/NOPB
Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
6.0V
Input Voltage
0.3V to V
DD +0.3V
Power Dissipation (Note 3)
Internally Limited
Load Resistance
2.5
, min
ESD Susceptibility(Note 4)
2000V
Pins 5,7,18,20
600V
ESD Susceptibility (Note 5)
200V
Pins 5,7,18,20
50V
Junction Temperature (Note 6)
150C
Storage Temperature
65C
≤ T
A ≤ 150C
Soldering Information
TSSOP Package
Vapor Phase (60 sec.)
215C
Infrared (15 sec.)
220C
See AN-450 “Surface Mounting and their Effects on
Product Reliability” for other methods of soldering surface
mount devices.
Operating Ratings(Notes 1, 2)
Temperature Range
T
MIN ≤ TA ≤ TMAX
40C
≤ T
A ≤ +85C
Supply Voltage
4.5V
≤ V
DD ≤ 5.5V
Thermal Resistance (TSSOP Package)
θ
JA
80C/W
θ
JC
20C/W
Electrical Characteristics (Notes 1, 2, 7)
The following specifications apply for V
DD = 5V, RL =4, LC filter values as shown in Figure 1, unless otherwise specified.
Limits apply for T
A = 25C.
Symbol
Parameter
Conditions
LM4663
Units
Typical
Max
Min
V
S
Operating Supply Voltage
Range
5
5.5
4.5
V
I
S
Quiescent Power Supply
Current, Class D Mode
V
IN =0VRMS,VHPSEL =0V
22
35
mA
I
S
Quiescent Power Supply
Current, Headphone Mode
V
IN =0VRMS,VHPSEL =VS
510
mA
I
SD
Quiescent Power Supply
Current, Shutdown Mode
V
SD =5V
2
A
R
IN
Input Resistance in Both Modes
20
k
V
IH
Minimum High Level Input
Voltage
Shutdown Pin & Input Select
Pin
4.5
V
IL
Maximum Low Level Input
Voltage
Shutdown Pin & Input Select
Pin
0.5
V
IH
Minimum High Level Input
Voltage
Headphone Select Pin
4.5
V
IL
Maximum Low Level Input
Voltage
Headphone Select Pin
0.5
V
Power Amplifiers
P
OR
Output Power, Per Channel
THD+N
≤ 1%, f
IN = 1kHz
2.1
W
P
D1
Power Dissipation
P
O = 2W/Chan, fIN = 1kHz
0.82
W
P
D2
Power Dissipation
P
O = 1W/Chan, fIN = 1kHz
0.49
W
P
D3
Power Dissipation
P
O = .25W/Chan, fIN = 1kHz
0.23
W
E
FF1
Efficiency
P
O = 2W/Chan, fIN = 1kHz
83
%
E
FF2
Efficiency
P
O = 1W/Chan, RL =8,fIN =
1kHz
85
80
%
E
FF3
Efficiency
P
O = .25W/Chan, fIN = 1kHz
69
%
THD+N
Harmonic Distortion + Noise
P
O = 1W/Chan, fIN = 1kHz
0.2
%
V
NOISE
Output Noise Voltage, RMS.
AWeighted
R
SOURCE =50,CIN = 1F,
BW = 8Hz to 22kHz
200
V
PSRR
Power Supply Rejection Ratio
(Referred to Input)
200mV, 1kHz, V
IN =0
44
dB
A
V
Voltage Gain
1kHz, V
IN = 100mV, RL =4
13
dB
A
VLAVR
Stereo Gain Tracking
1kHz, V
IN = 100mV, RL =4
0.1
dB
LM4663
www.national.com
2
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