參數(shù)資料
型號(hào): LM4888SQ/NOPB
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 音頻/視頻放大
英文描述: 3 W, 2 CHANNEL, AUDIO AMPLIFIER, QCC24
封裝: LLP-24
文件頁數(shù): 17/23頁
文件大小: 1181K
代理商: LM4888SQ/NOPB
Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
6.0V
Storage Temperature
65C to +150C
Input Voltage
0.3V to V
DD +0.3V
Power Dissipation (Note 4)
Internally limited
ESD Susceptibility (Note 5)
2000V
ESD Susceptibility (Note 6)
200V
Junction Temperature
150C
Solder Information
Small Outline Package
Vapor Phase (60 sec.)
215C
Infrared (15 sec.)
220C
Thermal Resistance
θ
JC (typ) — SQA24B
3C/W
θ
JA (typ) — SQA24B
42C/W
Operating Ratings
Temperature Range
T
MIN
≤ T
A
≤ T
MAX
40C
≤ T
A
≤ 85C
Supply Voltage
2.7V
≤ V
DD
≤ 5.5V
Electrical Characteristics (5V) (Notes 3, 7, 13)
The following specifications apply for V
DD = 5V unless otherwise noted. Limits apply for TA = 25C.
Symbol
Parameter
Conditions
LM4888
Units
(Limits)
Typical
Limit
V
DD
Supply Voltage
2.7
V (min)
5.5
V (max)
I
DD
Quiescent Power Supply Current
V
IN = 0V, IO = 0A (Note 10) , BTL mode
6
10
mA (max)
V
IN = 0V, IO = 0A (Note 10) , SE mode
3.0
6
mA (max)
I
SD
Shutdown Current
GND applied to the SHUTDOWN pin
0.04
2
A (max)
V
IH
Headphone Sense High Input
Voltage
3.7
4
V (min)
V
IL
Headphone Sense Low Input
Voltage
2.6
0.8
V (max)
V
IHSD
Shutdown, Headphone micro,
3D control
High Input voltage
1.2
1.4
V (min)
V
ILSD
Shutdown, Headphone micro,
3D control
Low Input voltage
1
0.4
V (max)
T
WU
Turn On Time
1F Bypass Cap (C6)
140
ms
Electrical Characteristics for Bridged-Mode Operation (5V) (Notes 3, 7, 13)
The following specifications apply for V
DD = 5V unless otherwise specified. Limits apply for TA = 25C.
Symbol
Parameter
Conditions
LM4888
Units
(Limits)
Typical
Limit
V
OS
Output Offset Voltage
V
IN = 0V
5
25
mV (max)
P
O
Output Power (Note 11)
THD+N = 1%, f = 1kHz (Note 12)
LM4888SQ, R
L =3
2.4
W
LM4888SQ, R
L =4
2.1
W
LM4888SQ, R
L =8
1.3
1.0
W (min)
THD+N = 10%, f = 1kHz (Note 12)
LM4888SQ, R
L =3
3.0
W
LM4888SQ, R
L =4
2.5
W
LM4888SQ, R
L =8
1.7
W
THD+N
Total Harmonic Distortion+Noise
1kHz, A
VD =2
LM4888SQ, R
L =4
,P
O = 1W
0.10
%
LM4888SQ, R
L =8
,P
O = .4W
0.06
%
LM4888
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