參數(shù)資料
型號： LM832
廠商： National Semiconductor Corporation
英文描述： LM832 Dynamic Noise Reduction System DNR
中文描述： LM832動態(tài)降噪系統(tǒng)紅霉素
文件頁數(shù)： 2/11頁
文件大?。?/td> 225K
代理商： LM832
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
10V
Power Dissipation (Note 1)
1.2W
Input Voltage
1.7 Vpp
Storage Temperature
b
65 to
a
150
§
C
b
40 to
a
85
§
Operating Temperature (Note 1)
Soldering Information
Y
Dual-In-Line Package
Soldering (10 seconds)
260
§
C
Y
Small Outline Package
Vapor Phase (60 seconds)
215
§
C
220
§
C
Infrared (15 seconds)
See AN-450 ‘‘Surface Mounting Methods and Their Effects
on Products Reliability’’ for other methods of soldering sur-
face mount devices.’’
DC Electrical Characteristics
T
A
e
25
§
C V
CC
e
3.0V
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
OP
I
CC
(1)
I
CC
(2)
V
IN
(1)
V
IN
(2)
V
IN
(3)
V
OUT
(1)
V
OUT
(2)
V
OUT
(3)
V
OUT
(4)
V
OUT
(5)
V
OUT
(6)
V
OS
Operating Voltage
Supply Voltage for Normal Operation
Pin 9 to GND 0.1
m
F, BW
e
Min, Note 2
DC GND Pin 9 with 2k, BW
e
Max, Note 2
Pin 2, Pin 13
1.5
3.0
9.0
V
Supply Current (1)
2.5
4.0
mA
Supply Current (2)
5.0
8.0
mA
Input Voltage (1)
0.20
0.36
0.5
V
Input Voltage (2)
Pin 6
0.50
0.65
0.8
V
Input Voltage (3)
Pin 9
0.50
0.65
0.8
V
Output Voltage (1)
Pin 4, Pin 11
0.20
0.35
0.50
V
Output Voltage (2)
Pin 5 Stereo Mode
0.15
0.28
0.40
V
Output Voltage (3)
Pin 5 Monaural Mode, DC Ground Pin 14
0.10
0.20
0.30
V
Output Voltage (4)
Pin 8
Pin 10 BW
e
Max, Note 2
Pin 10 BW
e
Min, Note 2
Pin 4, PIN 11; Change BW Min to Max
0.25
0.40
0.60
V
Output Voltage (5)
1.00
1.27
1.50
V
Output Voltage (6)
0.50
0.65
0.75
V
Output DC Shift
1.0
3.0
mV
AC Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
MAIN SIGNAL PATH (Note 3)
A
V
C.B.
Voltage Gain
V
IN
e
30 mVrms, f
e
1 kHz, BW
e
Max, Note 2
V
IN
e
30 mVrms, f
e
1 kHz, BW
e
Max, Note 2
0.1
m
F between Pin 9 - GND
b
1.0
b
1.0
600
0.0
a
1.0
a
1.0
1500
dB
Channel Balance
0
dB
f
MIN
f
MAX
THD
Min Bandwidth
1000
Hz
Max Bandwidth
DC Ground Pin 9 with 2k
V
IN
e
30 mVrms, f
e
1 kHz, BW
e
Max, Note 2
THD
e
3%, f
e
1 kHz, BW
e
Max Note 2
REF
e
30 mVrms, BW
e
Max, CCIR/ARM
Pin 2, Pin 13
Ref
e
30 mVrms, f
e
1 kHz, BW
e
Max, Note 2
V
RIPPLE
e
50 mVrms, f
e
100 Hz
24
30
46
kHz
Distortion
0.07
0.5
%
MV
IN
S/N
Max Input Voltage
120
150
mVrms
Signal to Noise
60
68
dB
Z
IN
C.S.
Input Impedance
14
20
26
k
X
Channel Separation
40
68
dB
P
SRR
CONTROL PATH
P
SRR
40
55
dB
A
V
sum(1)
A
V
sum(2)
A
V
1st
Z
IN
1st
A
VPKD
Z
INPKD
V
RPKD
Summing Amp Gain (1)
V
IN
e
30 mVrms at R and L, f
e
1 kHz
DC Ground Pin 14, f
e
1 kHz
Pin 6 to Pin 8
b
3.0
b
9.0
25
b
1.5
b
6.0
30
0.0
dB
Summing Amp Gain (2)
b
3.0
35
dB
Gain Amp Gain
dB
Input Impedance
Pin 6
28
40
52
k
X
Peak Detector Gain
AC In, DC Out; Pin 9 to Pin 10
25
30
35
V/V
Input Impedance
Pin 9
500
800
1100
X
Output DC Change
Pin 10, Change BW Min to Max
0.5
0.62
0.8
V
Note 1:
For operation in ambient temperature above 25
§
C, the device must be derated based on a 150
§
C maximum junction temperature and a thermal resistance
junction to ambient, as follows: LM832N
b
90
§
c/w, LM832M-115
§
c/w.
Note 2:
To force the DNR system into maximum bandwidth, connect a 2k resistor from pin 9 to GND. AC ground pin 9 or pin 6 to select minimum bandwidth. To
change minimum and maximum bandwidth, see Application Hints.
Note 3:
The maximum noise reduction CCIR/ARM weighted is about 14 dB. This is accomplished by changing the bandwidth from maximum to minimum. In actual
operation, minimum bandwidth is not selected, a nominal minimum bandwidth of about 2 kHz gives 10 dB of noise reduction. See Application Hints.
2
相關PDF資料
PDF描述
LM832M LM832 Dynamic Noise Reduction System DNR
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