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參數(shù)資料
| 型號： | LM9061 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Power MOSFET Driver with Lossless Protection |
| 中文描述： | 功率MOSFET驅(qū)動器，帶有無損保護(hù) |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 234K |
| 代理商： | LM9061 |
Application Hints
(Continued)
TL/H/12317–16
FIGURE 8. Increasing MOSFET Turn On Time
INCREASING MOSFET TURN ON TIME
The ability of the LM9061 to quickly turn on the MOSFET is
an important factor in the management of the MOSFET
power dissipation. Caution should be exercised when at-
tempting to increase the MOSFET Turn On time by limiting
the Gate drive current. The MOSFET average dissipation,
and the LM9061 Delay time, must be recalculated with the
extended switching transition time.
Figure 8 shows a method of increasing the MOSFET Turn
On time, without affecting the Turn Off time. In this method
the Gate is charged at an exponential rate set by the added
external Gate resistor and the MOSFET Gate capacitances.
Although the LM9061 will drive MOSFETs from any manu-
facturer, National Semiconductor offers a wide range of
power MOSFETs. Figure 9 shows a small sample of the
devices available.
Part
I
D
V
DSS
R
DS(ON)
Package
NDP706A
75A
60V
0.015
X
TO-220
NDP706B
70A
60V
0.018
X
TO-220
NDP708A
60A
80V
0.022
X
TO-220
NDB708A
60A
80V
0.022
X
TO-263
NDP606A
48A
60V
0.025
X
TO-220
NDP606B
42A
60V
0.028
X
TO-220
NDP608A
36A
80V
0.042
X
TO-220
NDB608A
36A
80V
0.042
X
TO-263
NDP508A
19A
80V
0.080
X
TO-220
NDB508A
19A
80V
0.080
X
TO-263
NDP408A
11A
80V
0.160
X
TO-220
NDS9410
7A
30V
0.03
X
SO-8
NDS9936
*
5A
30V
0.05
X
SO-8
NDS9945
*
3.5A
60V
0.10
X
SO-8
*
Dual
FIGURE 9. Recommended DMOS Power MOSFETs
12
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| LM9061N | Power MOSFET Driver with Lossless Protection |
| LM9070 | Low-Dropout System Voltage Regulator with Keep-Alive ON/OFF Control |
| LM9070M | Low-Dropout System Voltage Regulator with Keep-Alive ON/OFF Control |
| LM9070S | Low-Dropout System Voltage Regulator with Keep-Alive ON/OFF Control |
| LM9070T | Low-Dropout System Voltage Regulator with Keep-Alive ON/OFF Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM9061EVM | 功能描述:EVAL BOARD FOR LM9061 制造商:texas instruments 系列:- 零件狀態(tài):在售 主要用途:電源管理，高壓側(cè)驅(qū)動器（外部 FET） 嵌入式:- 使用的 IC/零件:LM9061 主要屬性:- 輔助屬性:- 所含物品:板 標(biāo)準(zhǔn)包裝:1 |
| LM9061M | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM9061M/NOPB | 功能描述:功率驅(qū)動器IC High-Side Pwr Mosfet Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM9061M/NOPB | 制造商:Texas Instruments 功能描述:IC, MOSFET DRIVER, SOIC-8 |
| LM9061MX | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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