參數(shù)資料
型號: LMBF170LT3
廠商: 樂山無線電股份有限公司
英文描述: N-CHANNEL POWER MOSFET
中文描述: N溝道功率MOSFET
文件頁數(shù): 1/4頁
文件大小: 108K
代理商: LMBF170LT3
LMBF170LT1–1/4
LESHAN RADIO COMPANY, LTD.
1
3
SOT-23
2
3
1
2
Gate
Source
Drain
LMBF170LT1
N-CHANNEL POWER MOSFET
LMBF170LT1
FEATURE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBF170LT1
6Z
3000/Tape&Reel
LMBF170LT1G
6Z
(Pb-Free)
3000/Tape&Reel
LMBF170LT3
6Z
10000/Tape&Reel
LMBF170LT3G
6Z
(Pb-Free)
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGS
60
Vdc
Drain–Gate Voltage
60
Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
50 s)
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current – Continuous
– Pulsed
ID
IDM
0.5
0.8
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 1.) TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
556
°
C/W
Junction and Storage Temperature
–55 to
+150
°
C
1. FR–5 = 1.0
0.75
0.062 in.
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