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參數(shù)資料
| 型號： | LMBT2222ALT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 155K |
| 代理商： | LMBT2222ALT1 |
LESHAN RADIO COMPANY, LTD.
O4–4/5
LMBT2222LT1
LMBT2222ALT1
t
t
V
CC
= 30V
I
C
/ I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
r
@V
CC
= 30V
t
d
@V
EB(off)
= 2.0V
t
d
@V
EB(off)
=0
I
C
/I
B
= 10
T
J
= 25°C
5.0 7.0
10
20
30
50
70
100
200
300
500
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
100
70
50
30
20
10
7.0
5.0
t
’
s
= t
s
–1/8 t
f
t
f
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn - Off Time
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
N
R
S
, SOURCE RESISTANCE (k
)
Figure 8. Source Resistance Effects
N
f = 1.0 kHz
0.010.02
0.05 0.1
0.2
f , FREQUENCY (kHz)
Figure 7. Frequency Effects
0.5
1.0
2.0
5.0 10
20
50
100
10
8
6
4
2
0
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
I
C
=50
μ
A
100
μ
A
500
μ
A
1.0 mA
I
C
= 1.0 mA, R
S
= 150
I
C
= 500
μ
A, R
S
= 200
I
C
= 100
μ
A, R
S
= 2.0 k
I
C
= 50
μ
A, R
S
= 4.0 k
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Current– Gain Bandwidth Product
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
V
CE
= 20 V
T
J
= 25°C
C
eb
C
cb
1.0
2.0
3.0
5.0
7.0
210
20
30
50
70
100
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
30
20
10
7.0
5.0
3.0
2.0
500
300
200
100
70
50
f
T
,
C
5.0 7.0
10
20
30
50
70
100
200
300
500
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT2222ALT1G | 制造商: 功能描述:TRANSISTOR SOT23 (LEAD FREE) 制造商:undefined 功能描述:TRANSISTOR SOT23 (LEAD FREE) |
| LMBT2222-ALT1G | 制造商:LRC 功能描述:40V,0.6A,225mW,NPN General Purpose Transistor |
| LMBT2222ATT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistor |
| LMBT2222AWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| LMBT2222LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
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