參數(shù)資料
型號(hào)： LMBT2222ALT1G
廠商： 樂山無線電股份有限公司
英文描述： General Purpose Transistors
中文描述： 通用晶體管
文件頁數(shù)： 2/5頁
文件大?。?/td> 155K
代理商： LMBT2222ALT1G
LESHAN RADIO COMPANY, LTD.
O4–2/5
LMBT2222LT1
LMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc,T
A
= –55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (3)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (3)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)(3)
Symbol
Min
Max
Unit
h
FE
––
35
50
75
35
100
50
30
40
––
––
—
—
300
––
––
—
LMBT2222A only
LMBT2222
LMBT2222A
Collector–Emitter Saturation Voltage(3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
V
CE(sat)
Vdc
LMBT2222
LMBT2222A
LMBT2222
LMBT2222A
––
––
––
––
0.4
0.3
1.6
1.0
(I
C
= 500mAdc, I
B
= 50 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
V
BE(sat)
Vdc
LMBT2222
LMBT2222A
LMBT2222
LMBT2222A
––
0.6
––
––
1.3
1.2
2.6
2.0
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
LMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
=10 Vdc, I
C
= 1.0mAdc, f =1.0kHz)
LMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
Small–Signal Current Gain(V
CE
=10Vdc,I
C
=1.0mAdc, f=1.0kHz)
LMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
=10 Vdc, I
C
= 1.0 mAdc,f =1.0 kHz)
LMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
Curren Base Time Comstant
(V
CB
= 20 Vdc, I
E
= 20 mAdc, f = 31.8 MHz)
Noise Figure
(V
CE
=10Vdc, I
C
=100
μ
Adc, R
S
=1.0k
, f =1.0kHz)
LMBT2222A
LMBT2222
LMBT2222A
f
T
250
300
––
––
––
2.0
0.25
–-
—
50
75
5.0
25
––
––
8.0
30
25
8.0
1.25
8.0
4.0
300
375
35
200
MHz
C
obo
C
pF
pF
LMBT2222
LMBT2222A
ibo
h
ie
k
LMBT2222A
h
re
X 10
–4
LMBT2222A
h
fe
—
LMBT2222A
h
oe
μ
mhos
LMBT2222A
LMBT2222A
rb, C
C
NF
––
––
150
4.0
ps
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
EB(off)
= – 0.5 Vdc
t
d
—
10
Rise Time
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
r
—
25
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc
t
s
—
225
ns
Fall Time
I
B1
= I
B2
= 15 mAdc)
t
f
—
60
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
相關(guān)PDF資料
PDF描述
LMBT2222LT1 General Purpose Transistors
LMBT2222LT1G General Purpose Transistors
LMBT2369ALT1 Switching Transistors
LMBT2369 Switching Transistors
LMBT2369A Switching Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LMBT2222-ALT1G 制造商:LRC 功能描述:40V,0.6A,225mW,NPN General Purpose Transistor
LMBT2222ATT1G 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistor
LMBT2222AWT1G 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors
LMBT2222LT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors
LMBT2222LT1G 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*