參數(shù)資料
型號(hào): LMBT2222LT1G
廠(chǎng)商: 樂(lè)山無(wú)線(xiàn)電股份有限公司
英文描述: General Purpose Transistors
中文描述: 通用晶體管
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 155K
代理商: LMBT2222LT1G
LESHAN RADIO COMPANY, LTD.
O4–4/5
LMBT2222LT1
LMBT2222ALT1
t
t
V
CC
= 30V
I
C
/ I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
r
@V
CC
= 30V
t
d
@V
EB(off)
= 2.0V
t
d
@V
EB(off)
=0
I
C
/I
B
= 10
T
J
= 25°C
5.0 7.0
10
20
30
50
70
100
200
300
500
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
100
70
50
30
20
10
7.0
5.0
t
s
= t
s
–1/8 t
f
t
f
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn - Off Time
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
N
R
S
, SOURCE RESISTANCE (k
)
Figure 8. Source Resistance Effects
N
f = 1.0 kHz
0.010.02
0.05 0.1
0.2
f , FREQUENCY (kHz)
Figure 7. Frequency Effects
0.5
1.0
2.0
5.0 10
20
50
100
10
8
6
4
2
0
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
I
C
=50
μ
A
100
μ
A
500
μ
A
1.0 mA
I
C
= 1.0 mA, R
S
= 150
I
C
= 500
μ
A, R
S
= 200
I
C
= 100
μ
A, R
S
= 2.0 k
I
C
= 50
μ
A, R
S
= 4.0 k
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Current– Gain Bandwidth Product
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
V
CE
= 20 V
T
J
= 25°C
C
eb
C
cb
1.0
2.0
3.0
5.0
7.0
210
20
30
50
70
100
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
30
20
10
7.0
5.0
3.0
2.0
500
300
200
100
70
50
f
T
,
C
5.0 7.0
10
20
30
50
70
100
200
300
500
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