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參數(shù)資料
| 型號： | LMBTA14LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Darlington Amplifier Transistors |
| 中文描述： | 達(dá)林頓晶體管放大器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 210K |
| 代理商： | LMBTA14LT1 |
LESHAN RADIO COMPANY, LTD.
LMBTA13–1/6
1
3
2
LMBTA13LT1
LMBTA14LT1
2
EMITTER
3
1
BASE
SOT–23
Darlington Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CES
30
Vdc
Collector–Base Voltage
V
CBO
30
Vdc
Emitter–Base Voltage
V
EBO
10
Vdc
Collector Current — Continuous
I
C
300
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
P
D
225
mW
1.8
mW/°C
R
θ
JA
556
°C/W
P
D
300
2.4
mW
mW/°C
R
θ
JA
T
J
, T
stg
417
°C/W
°C
–55 to +150
DEVICE MARKING
LMBTA13LT1 = 1M; LMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 100
μ
Adc, V
BE
= 0)
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 10Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
30
—
Vdc
I
CBO
—
100
nAdc
I
EBO
—
100
nAdc
COLLECTOR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBTA14LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Darlington Amplifier Transistors RoHS requirements. |
| LMBTA14LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Darlington Amplifier Transistors RoHS requirements. |
| LMBTA42LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HighVoltageTransistors |
| LMBTA42LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HighVoltageTransistors |
| LMBTA42LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HighVoltageTransistors RoHS requirements. |
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