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參數(shù)資料
| 型號(hào)： | LMBTA43LT1G |
| 廠(chǎng)商： | 樂(lè)山無(wú)線(xiàn)電股份有限公司 |
| 英文描述： | HighVoltageTransistors |
| 中文描述： | HighVoltageTransistors |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 85K |
| 代理商： | LMBTA43LT1G |
LESHAN RADIO COMPANY, LTD.
LMBTA42/43LT1-2/4
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS (3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
Symbol
Min
Max
Unit
h
FE
––
Both Types
Both Types
LMBTA42
LMBTA43
25
40
40
40
—
—
—
—
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
CE(sat)
Vdc
LMBTA42
LMBTA43
—
—
0.5
0.5
Base–Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
—
0.9
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product
(V
CE
= 20 Vdc, I
C
= 10mA, f = 100 MHz)
Collector – Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
f
T
50
—
MHz
C
cb
pF
LMBTA42
LMBTA43
—
—
3.0
4.0
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
LMBTA42LT1 LMBTA43LT1
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| LMBTA44LT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400 |
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| LMBTA92LT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:HighVoltageTransistor PNP Silicon |
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