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參數(shù)資料
| 型號： | LMH6503 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Wideband, Low Power, Linear Variable Gain Amplifier |
| 中文描述： | 寬帶，低功耗，線性可變增益放大器 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 1009K |
| 代理商： | LMH6503 |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance: (Note 4)
Human Body
Machine Model
Input Current
V
IN
Differential
Output Current
Supply Voltages (V
+
- V
)
Voltage at Input/ Output pins
Soldering Information:
2KV
200V
±
10mA
±
(V
+
V
)
120mA (Note 3)
12.6V
V
+
+0.8V,V
- 0.8V
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
Storage Temperature Range
Junction Temperature
235C
260C
65C to +150C
+150C
Operating Ratings
(Note 1)
Supply Voltages (V
+
- V
)
Temperature Range
Thermal Resistance:
14-Pin SOIC
14-Pin TSSOP
5V to 12V
40C to +85C
θ
JC
45C/W
51C/W
θ
JA
138C/W
160C/W
Electrical Characteristics
(Note 2)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
S
=
±
5V, A
V(MAX)
= 10, V
CM
= 0V, R
F
= 1k
, R
G
= 174
, V
IN-
_DIFF
=
±
0.1V, R
L
= 100
, V
G
= +1V.
Boldface
limits apply at the temperature extremes.
Symbol
Frequency Domain Response
BW
-3dB Bandwidth
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
V
OUT
<
0.5
PP
V
OUT
<
0.5
PP
, A
V(MAX)
= 100
V
OUT
<
0.5V
PP
,
1V
<
V
G
<
1V,
±
0.2dB
±
0.2dB Flatness, f
<
30MHZ
±
0.1dB, f
<
30MHZ
V
G
= 0V (Note 11)
135
50
40
MHz
GF
Gain Flatness
MHz
Att Range
Flat Band (Relative to Max Gain)
Attenuation Range (Note 13)
20
6.6
100
MHz
BW
Control
PL
G Delay
CT (dB)
Gain Control Bandwidth
MHz
Linear Phase Deviation
Group Delay
Feed-through
DC to 60MHz
DC to 130MHz
V
G
= 1.2V, 30MHz (Output
Referred)
f
<
10MHz
f
<
30MHz
1.6
2.6
48
deg
ns
dB
GR
Gain Adjustment Range
79
68
dB
Time Domain Response
t
r
, t
f
Rise and Fall Time
OS%
Overshoot
SR
Slew Rate
G Rate
Gain Change Rate
0.5V Step
0.5V Step
4V Step (Note 5)
V
IN
= 0.3V, 10%90% of final
output
2.2
10
1800
4.6
ns
%
V/μs
dB/ns
Distortion & Noise performance
HD2
2
nd
Harmonic Distortion
HD3
3
rd
Harmonic Distortion
THD
Total Harmonic Distortion
En tot
Total Equivalent Input Noise
I
n
Input Noise Current
DG
Differential Gain
2V
PP
, 20MHz
2V
PP
, 20MHz
2V
PP
, 20MHz
1MHz to 150MHz
1MHz to 150MHz
f = 4.43MHz, R
L
= 150
, Neg.
Sync
f = 4.43MHz, R
L
= 150
, Neg.
Sync
60
61
57
6.6
2.4
0.15
dBc
dBc
dBc
nV/
pA/
%
DP
Differential Phase
0.22
deg
L
www.national.com
2
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| LMH6504 | Wideband, Low Power, Variable Gain Amplifier |
| LMH6504MA | Wideband, Low Power, Variable Gain Amplifier |
| LMH6504MAX | Wideband, Low Power, Variable Gain Amplifier |
| LMH6504MM | Wideband, Low Power, Variable Gain Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMH6503MA | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6503MA/NOPB | 功能描述:特殊用途放大器 WDBD, LO PWR, LINEAR -IN-DB VAR GAIN AMP RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6503MAX | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6503MAX/NOPB | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6503MT | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
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