- 您現(xiàn)在的位置：買賣IC網 > PDF目錄358880 > LMH6504MAX (NATIONAL SEMICONDUCTOR CORP) Wideband, Low Power, Variable Gain Amplifier PDF資料下載
參數(shù)資料
| 型號： | LMH6504MAX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 模擬信號調理 |
| 英文描述： | Wideband, Low Power, Variable Gain Amplifier |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO8 |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/19頁 |
| 文件大?。?/td> | 759K |
| 代理商： | LMH6504MAX |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 4):
Human Body
Machine Model
Input Current
Output Current
Supply Voltages (V
+
- V
)
Voltage at Input/ Output pins
Storage Temperature Range
1000V
100V
±
10 mA
120 mA (Note 3)
12.6V
V
+
+0.8V, V
0.8V
65C to 150C
Junction Temperature
Soldering Information:
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
150C
235C
260C
Operating Ratings
(Note 1)
Supply Voltages (V
+
- V
)
Operating Temperature Range
Thermal Resistance:
8 -Pin SOIC
8-Pin MSOP
7V to 12V
40C to +85C
(
θ
JA
)
165
235
(
θ
JC
)
60
65
Electrical Characteristics
(Note 2)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
S
=
±
5V, A
VMAX
= 9.7 V/V, R
F
= 1k
, R
G
= 100
, V
IN
=
±
0.1V, R
L
= 100
, V
G
= +2V.
Boldface
limits apply at the temperature extremes.
Symbol
Frequency Domain Response
BW
-3dB Bandwidth
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
V
OUT
<
1 V
PP
V
OUT
<
4 V
PP
, A
VMAX
= 100
V
OUT
<
1 V
PP
0.9V
≤
V
G
≤
2V,
±
0.2 dB
±
0.2 dB Flatness, f
<
30 MHz
±
0.1 dB Flatness, f
<
30 MHz
V
G
= 1V (Note 12)
150
58
40
MHz
GF
Gain Flatness
MHz
Att Range
Flat Band (Relative to Max Gain)
Attenuation Range (Note 13)
26
9.5
150
dB
BW
Control
CT (dB)
Gain control Bandwidth
MHz
Feed-through
V
G
= 0V, 30 MHz
(Output/Input)
f
<
10 MHz
f
<
30 MHz
53
dB
GR
Gain Adjustment Range
80
73
dB
Time Domain Response
t
r
, t
f
Rise and Fall Time
OS %
Overshoot
SR
Slew Rate (Note 5)
0.5V Step
2.1
20
800
1500
ns
%
4V Step, Non Inverting
4V Step, Inverting
V/μs
Distortion & Noise Performance
HD2
2
nd
Harmonic Distortion
HD3
3
rd
Harmonic Distortion
THD
Total Harmonic Distortion
En tot
Total Equivalent Input Noise
I
N
Input Noise Current
DG
Differential Gain
DP
Differential Phase
2V
PP
, 20 MHz
47
–55
45
4.4
2.6
0.45
0.13
dBc
f
>
1 MHz, R
SOURCE
= 50
f
>
1 MHz
f = 4.43 MHz, R
L
= 100
nV/
pA/
%
deg
L
www.national.com
2
相關PDF資料 |
PDF描述 |
|---|---|
| LMH6504MM | Wideband, Low Power, Variable Gain Amplifier |
| LMH6504MMX | Wideband, Low Power, Variable Gain Amplifier |
| LMH6533 | Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator |
| LMH6533SP | Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator |
| LMH6533SPX | Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LMH6504MAX/E7000960 | 制造商:Texas Instruments 功能描述: |
| LMH6504MAX/NOPB | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6504MM | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6504MM NOPB | 制造商:Texas Instruments 功能描述:1 Variable Gain Amplifier 制造商:Texas Instruments 功能描述:1 Variable Gain Amplifier Bulk |
| LMH6504MM/NOPB | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。