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參數(shù)資料
型號： LMH6618MKE/NOPB
廠商： National Semiconductor
文件頁數(shù)： 36/38頁
文件大?。?/td> 0K
描述： IC OP AMP SGL VF RRIO TSOT23-6
標(biāo)準(zhǔn)包裝： 250
系列： PowerWise®
放大器類型： 電壓反饋
電路數(shù)： 1
輸出類型： 滿擺幅
轉(zhuǎn)換速率： 57 V/µs
增益帶寬積： 65MHz
-3db帶寬： 140MHz
電流 - 輸入偏壓： 1.5µA
電壓 - 輸入偏移： 100µV
電流 - 電源： 1.35mA
電流 - 輸出 / 通道： 35mA
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 11 V，±1.35 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： SOT-23-6 細(xì)型，TSOT-23-6
供應(yīng)商設(shè)備封裝： TSOT-23-6
包裝： 帶卷 (TR)
配用： 551600083-001-ND - BOARD FOR SOT23 LMH6611/18
其它名稱： LMH6618MKE
LMH6618MKE-ND
LMH6618MKE/NOPBTR
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
±5V ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V
+ = 5V, V = 5V, DISABLE = 5V, V
CM = VO = 0V, AV =
+1 (RF = 0), otherwise RF = 2 k for AV ≠ +1, RL = 1 k || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(1)
(2)
(1)
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 k, VOUT = 0.2 VPP
140
MHz
AV = 2, 1, RL = 1 k, VOUT = 0.2 VPP
53
GBW
Gain Bandwidth (LMH6618)
AV = 10, RF = 2 k, RG = 221,
54
65
MHz
RL = 1 k, VOUT = 0.2 VPP
GBW
Gain Bandwidth (LMH6619)
AV = 10, RF = 2 k, RG = 221,
54
58
MHz
RL = 1 k, VOUT = 0.2 VPP
LSBW
3 dB Bandwidth Large Signal
AV = 1, RL = 1 k, VOUT = 2 VPP
16
MHz
AV = 2, RL = 150, VOUT = 2 VPP
15
Peak
Peaking
AV = 1, CL = 5 pF
0.05
dB
0.1
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
15
MHz
dBBW
RF = RG = 1.21 k
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
%
RL = 150 to V
+/2
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
deg
RL = 150 to V
+/2
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
30
ns
SR
Slew Rate
2V Step, AV = 1
45
57
V/
μs
ts_0.1
0.1% Settling Time
2V Step, AV = 1
90
ns
ts_0.01
0.01% Settling Time
2V Step, AV = 1
120
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
fC = 100 kHz, VOUT = 2 VPP, RL = 1 k
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 k
88
dBc
fC = 5 MHz, VOUT = 2 VPP, RL = 1 k
70
en
Input Voltage Noise Density
f = 100 kHz
10
nV/
√Hz
in
Input Current Noise Density
f = 100 kHz
1
pA/
√Hz
CT
Crosstalk (LMH6619)
f = 5 MHz, VIN = 2 VPP
80
dB
Input DC Performance
VOS
Input Offset Voltage
VCM = 4.5V (pnp active)
0.1
±0.75
mV
VCM = 4.5V (npn active)
±1.3
TCVOS
Input Offset Voltage Temperature Drift
(3)
0.9
V/°C
IB
Input Bias Current
VCM = 4.5V (pnp active)
1.5
2.4
μA
VCM = 4.5V (npn active)
+1.0
+1.9
IOS
Input Offset Current
0.01
±0.26
μA
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
M
CMVR
Common Mode Voltage Range
DC, CMRR
≥ 65 dB
5.2
V
CMRR
Common Mode Rejection Ratio
VCM Stepped from 5.1V to 3.4V
84
100
dB
VCM Stepped from 4.0V to 5.1V
83
108
AOL
Open Loop Voltage Gain
RL = 1 k to +4.6V or 4.6V
86
95
dB
RL = 150 to +4.3V or 4.3V
79
84
(1)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(2)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(3)
Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright 2007–2012, Texas Instruments Incorporated
7
Product Folder Links: LMH6618 LMH6619
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