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參數(shù)資料
| 型號： | LMUN2111 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistors |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 233K |
| 代理商： | LMUN2111 |
LESHAN RADIO COMPANY, LTD.
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R
1
R
2
MARKING DIAGRAM
A6x
M
A6x = Device Marking
x
= A – L(See Page 2)
M
= Date Code
1
3
2
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of this
data sheet.
LMUN2111LT1
SERIES
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
°
C/W
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
508 (Note 1.)
311 (Note 2.)
°
C/W
Thermal Resistance –
Junction-to-Lead
R
θ
JL
174 (Note 1.)
208 (Note 2.)
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN2111
-
1/8
SOT-23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMUN21110LT1 | Bias Resistor Transistors |
| LMUN2111LT1 | Bias Resistor Transistors |
| LMUN2112LT1 | Bias Resistor Transistors |
| LMUN2112LT3 | Bias Resistor Transistors |
| LMUN2113LT1 | Bias Resistor Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMUN21110LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| LMUN2111LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| LMUN2111LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| LMUN2111LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| LMUN2112LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
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