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參數(shù)資料
| 型號： | LMV712 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
| 中文描述： | 低功耗，低噪聲，高輸出，RRIO雙路運(yùn)算放大器獨(dú)立的關(guān)斷 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 505K |
| 代理商： | LMV712 |
Application Information
(Continued)
In Figure 3 the isolation resistor R
and the load capacitor
C
form a pole to increase stability by adding more phase
margin to the overall system. The desired performance de-
pends on the value of R
ISO
. The bigger the R
resistor
value, the more stable V
OUT
will be. But the DC accuracy is
degraded when the R
resistor in Figure 3 the output voltage would be divided by
R
ISO
and the load resistor.
The circuit in Figure 4is an improvement to the one in Figure
3 because it provides DC accuracy as well as AC stability. In
this circuit, R
F
provides the DC accuracy by using
feed-forward techniques to connect V
IN
to R
L
. C
F
and R
ISO
serve to counteract the loss of phase margin by feeding the
high frequency component of the output signal back to the
amplifier’s inverting input, thereby preserving phase margin
in the overall feedback loop. Increased capacitive drive is
possible by increasing the value of C
F
. This in turn will slow
down the pulse response.
Latchup
CMOS devices tend to be susceptible to latchup due to their
internal parasitic SCR (silicon controlled rectifier) effects.
The input and output pins look similar to the gate of the SCR.
There is a minimum current required to trigger the SCR gate
lead. The LMV712 is designed to withstand 150mA surge
current on all the pins. Some resistive method should be
used to isolate any capacitance from supplying excess cur-
rent to the pins. In addition, like an SCR, there is a minimum
holding current for any latchup mode. Limiting current to the
supply pins will also inhibit latchup susceptibility.
10137032
FIGURE 3.
10137033
FIGURE 4.
L
www.national.com
11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMV712BL | Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
| LMV712BLX | Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
| LMV712LD | Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
| LMV712LDX | Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
| LMV712MM | Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMV712BL | 功能描述:IC OP AMP LOPWR HIOPT 10USMD RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 放大器類型:電壓反饋 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:33 V/µs 增益帶寬積:20MHz -3db帶寬:30MHz 電流 - 輸入偏壓:2nA 電壓 - 輸入偏移:3000µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:30mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOIC 包裝:帶卷 (TR) |
| LMV712BL/NOPB | 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R I/O 5.5V 10-Pin uSMD T/R |
| LMV712BLX | 功能描述:IC OP AMP RRIO DUAL SD 10USMD RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 其它有關(guān)文件:Automotive Product Guide 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):1 輸出類型:滿擺幅 轉(zhuǎn)換速率:3 V/µs 增益帶寬積:10MHz -3db帶寬:- 電流 - 輸入偏壓:1pA 電壓 - 輸入偏移:70µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:48mA 電壓 - 電源，單路/雙路(±):2.7 V ~ 5.5 V，±1.35 V ~ 2.75 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:SOT-23-6 供應(yīng)商設(shè)備封裝:SOT-6 包裝:Digi-Reel® 其它名稱:MAX4475AUT#TG16DKR |
| LMV712BLX/NOPB | 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R I/O 5.5V 10-Pin uSMD T/R |
| LMV712IDGSR | 功能描述:運(yùn)算放大器 - 運(yùn)放 Low-Pwr Low-Noise Hi-Out RRIO Dual RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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