參數(shù)資料
型號(hào): LMX2216
廠商: National Semiconductor Corporation
英文描述: 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications
中文描述: 0.1 GHz至2.0 GHz的低噪聲放大器/射頻個(gè)人通信攪拌機(jī)
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 258K
代理商: LMX2216
Pin Description
Pin
No.
Pin
Name
I/O
Description
1
V
CC
M
I
Voltage supply for the mixer. The input voltage level to this pin should be a DC Voltage ranging from
2.85V to 3.15V.
2
GND
Ground
3
LNA
IN
I
RF input signal to the LNA. External DC blocking capacitor is required.
4
GND
Ground
5
GND
Ground
6
RF
IN
I
RF input to the mixer. The RF signal to be down converted is connected to this pin. External DC
blocking capacitor is required.
7
GND
Ground
8
PWDN
I
Power down signal pin. Both the LNA and mixer are powered down when a HIGH level is applied to
this pin (V
IH
).
9
IF
OUT
O
IF output signal of the mixer. External DC blocking capacitor is required.
10
GND
Ground
11
LO
IN
I
Local oscillator input signal to the mixer. External DC blocking capacitor is required.
12
GND
Ground
13
GND
Ground
14
LNA
OUT
O
Output of the LNA. This pin outputs the amplified RF signal. External DC blocking capacitor is
required.
15
GND
Ground
16
V
CC
A
I
LNA supply Voltage. DC Voltage ranging from 2.85V to 3.15V.
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
Storage Temperature (T
S
)
Operating Temperature (T
O
)
6.5V
b
65
§
C to
a
150
§
C
b
40
§
C to
a
85
§
C
Recommended Operating
Conditions
Supply Voltage (V
CC
)
Operating Temperature (T
A
)
RF
IN
LO
IN
2.85V–3.15V
b
10
§
C to
a
70
§
C
0.1 GHz to 2.0 GHz
0.1 GHz to 2.0 GHz
2
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