參數(shù)資料
型號： LMX3161VBHX
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 無繩電話/電話
英文描述： Single Chip Radio Transceiver
中文描述： TELECOM, CORDLESS, SUPPORT CIRCUIT, PQFP48
封裝： 7 X 7 MM, 1.40 MM HEIGHT, PLASTIC, QFP-48
文件頁數(shù)： 6/14頁
文件大小： 212K
代理商： LMX3161VBHX
Electrical Characteristics
(Continued)
The following specifications are guaranteed for V
CC
= 3.6V and T
A
= 25C, unless otherwise specified.
Symbol
Parameter
RSSI
(Note 11)
RSSI
out
Output Voltage
Conditions
Min
Typ
Max
Unit
f
IN
= 110 MHz
P
IN
=80 dBm
@
IF
IN
input pin
P
IN
=20 dBm
@
IF
IN
input pin
P
IN
= 90 to 30 dBm
@
LIM
IN
input pin
0.12
0.9
11
0.2
1.2
18
0.6
—
25
V
V
Slope
mV/d
B
dB
RSSI
DC COMPENSATION CIRCUIT
V
OS
Input Offset Voltage
V
I/O
Input/Output Voltage Swing
R
SH
Sample and Hold Resistor
FREQUENCY SYNTHESIZER
f
IN
Input Frequency Range
P
IN
Input Signal Level
f
OSC
Oscillator Frequency Range
V
OSC
Oscillator Sensitivity
I
Do-source
Charge Pump Output Current
Dynamic Range
P
IN
min= 90 dBm
@
LIM
IN
input pin
—
60
—
5
—
2000
—
1.0
3000
+5
—
3600
mV
V
PP
Centered at 1.5V
P
IN
= 14 to 9 dBm
(Note 9)
Z
IN
=200
(Note 15)
(Note 12)
(Note 12)
V
do
= V
P
/2, I
cpo
= LOW
(Note 14)
V
do
= V
P
/2, I
cpo
= LOW
(Note 14)
V
do
= V
P
/2, I
cpo
= HIGH
(Note 14)
V
do
= V
P
/2, I
CPO
= HIGH
(Note 14)
0.5
≤
V
≤
V
p
0.5
T
A
= 25C
f
IN
= 945 MHz, f
OUT
= 1.89 GHz
(Note 13)
P
IN
= 11.5 dBm, f
OUT
= 1.89 GHz
P
IN
= 11.5 dBm, f
OUT
= 945 MHz
P
IN
= 11.5 dBm, f
OUT
= 2.835 GHz
TX chain powered up
TX chain powered down
500
—
5
0.5
—
—
1200
—
20
—
—
MHz
dBm
MHz
V
pp
mA
11.5
—
1.0
1.5
I
Do-sink
—
1.5
—
mA
I
Do-source
—
6.0
—
mA
I
Do-sink
—
6.0
—
mA
I
Do-Tri
1.0
—
1.0
nA
FREQUENCY DOUBLER
f
OUT
Output Frequency Range
P
OUT
Output Signal Level
Fundamental Output Power
Harmonic Output Power
Z
OUT
Output Impedance
1770
10
—
—
—
—
—
3
22
24
25+j60
15-j30
1900
—
13.5
15
—
—
MHz
dBm
dBm
dBm
VOLTAGE REGULATOR
V
O
Output Voltage
DIGITAL INPUT/OUTPUT PINS
V
IH
High Level Input Voltage
V
IL
Low Level Input Voltage
I
IH
Input Current
V
OH
High Level Output Voltage
V
OL
Low Level Output Voltage
I
LOAD
= 5 mA
2.55
2.75
2.90
V
2.4
0.0
10
2.4
—
—
—
—
—
—
V
CC
0.8
10
—
0.4
V
V
μA
V
V
GND
<
V
IN
<
V
CC
I
OH
=0.5 mA
I
OL
=0.5 mA
Note 3:
The mixer section is tested at 1.89 GHz, and it is guaranteed by design to operate within 1.7 — 2.0 GHz range.
Note 4:
The IF section of this device is designed for optimum operating performance at 110 MHz to meet the DECT specifications.
Note 5:
The matching network used on RF
consists of a series 3.3 pF capacitance into the pin. The matching circuit used on MIXER
OUT
consists of a series 100
nH inductance and a shunt 12 pF capacitance into the pin.
Note 6:
Noise Figure measurements are made with 890 MHz BPF on the F
IN
input and matching networks on RF
IN
and MIXER
OUT
.
Note 7:
The matching network used on IF
IN
consists of a series 33 nH inductance and a shunt 1.8 pF capacitance into the pin.
Note 8:
The discriminator is with the DC level centered at 1.5V. The unloaded Q of the tank is 40.
Note 9:
The frequency synthesizer section is guaranteed by design to operate within 500 - - 1200 MHz range.
Note 10:
Nominal refers to zero DC offsets programmed for the discriminator.
Note 11:
It depends on loss of inter-stage filter. These specifications are for an inter-stage filter with a loss of 8 dB.
Note 12:
The frequency synthesizer section is guaranteed by design to operate for OSC
IN
input frequency within 5 — 20 MHz range and minimun amplitude of 0.5
V
pp
.
L
www.national.com
6
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