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參數(shù)資料
| 型號(hào)： | LNA4905L |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Infrared Light Emitting Diode |
| 中文描述： | 5 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 封裝： | PLASTIC, LT5RS102-001, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 21K |
| 代理商： | LNA4905L |
Infrared Light Emitting Diodes
LNA4905L
GaAs Infrared Light Emitting Diode
1
For optical control equipment
I
Features
High output power, high-efficiency : (15 mW min.)
Quick response, high speed modulation (f
C
=
30 MHz typ.)
Transparent epoxy resin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Ratings
Unit
Power dissipation
P
D
I
F
I
FP
V
R
T
opr
T
stg
190
mW
Forward current(DC)
100
mA
Pulse forward current
*
1
A
Reverse voltage(DC)
3
V
Operating ambient temperature
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
Parameter
Symbol
Conditions
min
typ
max
Unit
Total power output
P
O
λ
P
λ
I
F
=
50 mA
I
F
=
50 mA
I
F
=
50 mA
I
F
=
100 mA
V
F
=
3 V
15
mW
Peak emission wavelength
880
nm
Spectral half band width
50
nm
Forward voltage (DC)
V
F
I
R
θ
1.7
2.1
V
Reverse current (DC)
10
μ
A
Half-power angle
The angle when the beam intensity is halved
15
deg
I
Electro-optical
T
a
=
25
°
C
±
3
°
C
1 : Anode
2 : Cathode
Note) 1. Cut-off frequency : 30 MHz
2. LED might radiate red light under large current drive.
5
φ
5±0.2
5
1
1
4
1
1
2-1±0.15
2-0.6±0.15
2.54
*
0.6±0.15
2
1
2
Note 1. * : Indicates root dimensions of lead.
2. A dimension is as a reference figure
as coming with no a public difference.
Note) * : f
=
100 Hz, Duty cycle
=
0.1%
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