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參數(shù)資料
| 型號： | LP3000SOT89 |
| 英文描述： | LOW NOISE, HIGH LINEARITY PACKAGED PHEMT |
| 中文描述： | 低噪聲，高線性包裝的PHEMT器件 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | LP3000SOT89 |
LP3000P100
P
ACKAGED
2W
P
OWER
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
—
T
Ambient
= 22
±
3
°
C
12
V
Gate-Source Voltage
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
-4
V
Drain-Source Current
2xI
DSS
30
mA
Gate Current
mA
RF Input Power
700
mW
Channel Operating Temperature
175
oC
Storage Temperature
Total Power Dissipation
-65
175
3.0
oC
W
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25
°
C:
P
TOT
= 3.0W – (0.020W/
°
C) x T
HS
where T
HS
= heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
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