參數(shù)資料
型號: LP3852EMPX-5.0
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 基準電壓源/電流源
英文描述: 1.5A Fast Ultra Low Dropout Linear Regulators
中文描述: 5 V FIXED POSITIVE LDO REGULATOR, 0.435 V DROPOUT, PDSO5
封裝: SOT-223, 5 PIN
文件頁數(shù): 8/19頁
文件大小: 384K
代理商: LP3852EMPX-5.0
Electrical Characteristics
LP3852/LP3855
(Continued)
Limits in standard typeface are for T
J
= 25C, and limits in
boldface type
apply over the
full operating temperature range
.
Unless otherwise specified: V
IN
= V
O(NOM)
+ 1V, I
L
= 10 mA, C
OUT
= 10μF, V
SD
= 2V.
Symbol
Parameter
Conditions
Typ
(Note
4)
LP3852/5
(Note 5)
Units
Min
Max
Shutdown Input
V
SDT
Shutdown Threshold
Output = High
Output = Low
I
L
= 1.5A
I
L
= 1.5A
V
SD
= V
IN
V
IN
0
20
25
1
2
V
0.3
T
dOFF
T
dON
I
SD
Turn-off delay
Turn-on delay
SD Input Current
μs
μs
nA
Error Flag
V
T
V
TH
V
EF(Sat)
Td
I
lk
Threshold
Threshold Hysteresis
Error Flag Saturation
Flag Reset Delay
Error Flag Pin Leakage
Current
Error Flag Pin Sink
Current
(Note 9)
(Note 9)
I
sink
= 100μA
10
5
0.02
1
1
5
2
16
8
0.1
%
%
V
μs
nA
I
max
V
Error
=
0.5V
1
mA
AC Parameters
PSRR
Ripple Rejection
V
IN
= V
OUT
+ 1V
C
OUT
= 10uF
V
OUT
= 3.3V, f = 120Hz
V
IN
= V
OUT
+ 0.5V
C
OUT
= 10uF
V
OUT
= 3.3V, f = 120Hz
f = 120Hz
BW = 10Hz – 100kHz
V
OUT
= 2.5V
BW = 300Hz – 300kHz
V
OUT
= 2.5V
73
dB
57
ρ
n(l/f)
Output Noise Density
0.8
150
μV
e
n
Output Noise Voltage
μV (rms)
100
Note 1:
Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is
intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed
test conditions.
Note 2:
At elevated temperatures, devices must be derated based on package thermal resistance. The devices in TO220 package must be derated at
θ
= 50C/W
(with 0.5in
, 1oz. copper area), junction-to-ambient (with no heat sink). The devices in the TO263 surface-mount package must be derated at
θ
jA
= 60C/W (with
0.5in
, 1oz. copper area), junction-to-ambient. See Application Hints.
Note 3:
The human body model is a 100pF capacitor discharged through a 1.5k
resistor into each pin.
Note 4:
Typical numbers are at 25C and represent the most likely parametric norm.
Note 5:
Limits are guaranteed by testing, design, or statistical correlation.
Note 6:
If used in a dual-supply system where the regulator load is returned to a negative supply, the output must be diode-clamped to ground.
Note 7:
The output PMOS structure contains a diode between the V
and V
terminals. This diode is normally reverse biased. This diode will get forward biased
if the voltage at the output terminal is forced to be higher than the voltage at the input terminal. This diode can typically withstand 200mA of DC current and 1Amp
of peak current.
Note 8:
Output voltage line regulation is defined as the change in output voltage from the nominal value due to change in the input line voltage. Output voltage load
regulation is defined as the change in output voltage from the nominal value due to change in load current. The line and load regulation specification contains only
the typical number. However, the limits for line and load regulation are included in the output voltage tolerance specification.
Note 9:
Error Flag threshold and hysteresis are specified as percentage of regulated output voltage. See Application Hints.
Note 10:
Dropout voltage is defined as the minimum input to output differential voltage at which the output drops 2% below the nominal value. Dropout voltage
specification applies only to output voltages of 2.5V and above. For output voltages below 2.5V, the drop-out voltage is nothing but the input to output differential,
since the minimum input voltage is 2.5V.
Note 11:
The minimum operating value for V
IN
is equal to either [V
OUT(NOM)
+ V
DROPOUT
] or 2.5V, whichever is greater.
Note 12:
The SOT 223 package devices have slightly higher dropout due to increased bond wire resistance.
L
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