參數(shù)資料
型號(hào): LP61L1024
廠商: AMIC Technology Corporation
英文描述: 128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM
中文描述: 128K的× 8位3.3V的高速低虛擬通道連接CMOS SRAM的
文件頁(yè)數(shù): 10/16頁(yè)
文件大?。?/td> 178K
代理商: LP61L1024
LP61L1024
(August, 2002, Version 2.1)
9
AMIC Technology, Inc.
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
t
WC
Address
CE1
CE2
D
IN
t
DH
t
DW
(4)
(4)
t
CW5
t
AW
t
WR3
WE
D
OUT
t
WHZ7
t
WP2
t
CW5
t
AS1
Notes: 1. t
AS
is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (t
WP
) of a low CE1, a high CE2 and a low WE .
3. t
WR
is measured from the earliest of CE1 or WE going high or CE2 going low to the end of the Write cycle.
4. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transition or after
the WE transition, outputs remain in a high impedance state.
5. t
CW
is measured from the later of CE going low or CE2 going high to the end of Write.
6. OE is continuously low. (OE = V
IL
)
7. Transition is measured
±
500mV from steady state. This parameter is sampled and not 100% tested.
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