參數(shù)資料
型號(hào): LP62S1664CU-55LLI
廠商: AMIC Technology Corporation
英文描述: 64K X 16 BIT LOW VOLTAGE CMOS SRAM
中文描述: 64K的× 16位低電壓CMOS的SRAM
文件頁(yè)數(shù): 5/15頁(yè)
文件大小: 148K
代理商: LP62S1664CU-55LLI
LP62S1664C Series
PRELIMINARY (February
, 2002, Version 0.0)
4
AMIC Technology, Inc.
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -40
°
C to +85
°
C
Storage Temperature, Tstg . . . . . . . . . -55
°
C to +125
°
C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . 260
°
C, 10 sec
DC Electrical Characteristics
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
(T
A
= -25
°
C to + 85
°
C for -LLT or -40
°
C to + 85
°
C for -LLI, VCC = 2.7V to 3.6V, GND = 0V)
LP62S1664C-55LLT/LLI
LP62S1664C-70LLT/LLI
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Conditions
I
LI
Input Leakage
Current
-
1
-
1
μ
A
V
IN
= GND to VCC
I
LO
Output Leakage
Current
-
1
-
1
μ
A
CE = V
IH
or OE = V
IH
or
LB = HB = V
IH
or
WE = V
IL
V
I/O
= GND to VCC
I
CC
Active Power
Supply Current
-
5
-
5
mA
CE = V
IL
, I
I/O
= 0mA
I
CC1
-
50
-
40
mA
Min. Cycle, Duty = 100%
CE = V
IL
, I
I/O
= 0mA
I
CC2
Dynamic
Operating
Current
-
5
-
5
mA
CE = V
IL
, V
IH
= VCC,
V
IL
= 0V, f = 1MHz,
I
I/O
= 0 mA
I
SB
-
0.3
-
0.3
mA
CE = V
IH
I
SB1
Standby Power
Supply Current
-
5
-
5
μ
A
CE
VCC - 0.2V
V
IN
0V
V
OL
Output Low
Voltage
-
0.4
-
0.4
V
I
OL
= 2.1mA
V
OH
Output High
Voltage
2.2
-
2.2
-
V
I
OH
= -1.0mA
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