參數(shù)資料
型號(hào)： LP7512P70
英文描述： PACKAGED ULTRA LOW NOISE PHEMT
中文描述： 包裝的超低噪音PHEMT器件
文件頁數(shù)： 1/3頁
文件大小： 59K
代理商： LP7512P70
LP7512P70
P
ACKAGED
U
LTRA
L
OW
N
OISE
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
FEATURES
0.7 dB Noise Figure at 12 GHz
12 dB Associated Gain at 12 GHz
0.4 dB Noise Figure at 2 GHz
18 dB Associated Gain at 2 GHz
Low DC Power Consumption: 30mW
DESCRIPTION AND APPLICATIONS
The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
μ
m by 200
μ
m Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for optimum low noise performance. The LP7512’s active
areas are passivated with Si
3
N
4
, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers in wireless systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25
°
C*
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current**
Noise Figure
Associated Gain at minimum NF
Transconductance
Gate-Source Leakage Current
I
DSS
NF
G
A
G
M
I
GSO
I
GDO
V
P
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 25% I
DSS
V
DS
= 2 V; I
DS
= 25% I
DSS
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -3 V
V
GS
= -3 V
V
DS
= 2 V; I
DS
= 1 mA
15
30
1.0
mA
dB
dB
mS
μ
A
μ
A
V
0.7
12
90
1
11
60
15
Gate-Drain Leakage Current
1
15
Pinch-Off Voltage
-0.2
-0.4
-1.5
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LP7512P70-1 = 15-30 mA and LP7512P70–2 = 31-50 mA
相關(guān)PDF資料
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