參數(shù)資料
型號: LPC3220FET296
廠商: NXP SEMICONDUCTORS
元件分類: 微控制器/微處理器
英文描述: ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller
中文描述: 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
封裝: 15 X 15 MM, 0.70 MM PITCH, PLASTIC, MO-216, SOT1048-1, TFBGA-296
文件頁數(shù): 55/79頁
文件大?。?/td> 599K
代理商: LPC3220FET296
LPC3220_30_40_50
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
55 of 79
NXP Semiconductors
LPC3220/30/40/50
16/32-bit ARM microcontrollers
10.5 ADC static characteristics
[1]
Conditions: V
SSA
= 0 V (on pin VSS_AD); V
DDA(3V3)
= 3.3 V (on pin VDD_AD).
The ADC is monotonic; there are no missing codes.
[2]
[3]
The differential linearity error (E
D
) is the difference between the actual step width and the ideal step width. See
Figure 6
.
The integral non-linearity (E
L(adj)
) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See
Figure 6
.
[4]
[5]
The offset error (E
O
) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the
ideal curve. See
Figure 6
.
[6]
The gain error (E
G
) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset
error, and the straight line which fits the ideal transfer curve. See
Figure 6
.
[7]
The absolute error (E
T
) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated
ADC and the ideal transfer curve. See
Figure 6
.
Table 10.
V
DDA(3V3)
= 3.3 V; T
amb
= 25
C unless otherwise specified; ADC clock frequency 4.5 MHz.
Symbol
Parameter
V
IA
analog input voltage
C
ia
analog input capacitance
E
D
differential linearity error
E
L(adj)
integral non-linearity
E
O
offset error
E
G
gain error
E
T
absolute error
R
vsi
voltage source interface resistance
ADC static characteristics
Conditions
Min
0
-
Typ
-
-
0.5
0.6
1
0.3
Max
V
DDA(3V3)
1
1
1
3
0.6
4
40
Unit
V
pF
LSB
LSB
LSB
%
LSB
k
[1][2][3]
-
[1][4]
-
[1][5]
-
[1][6]
-
[1][7]
-
-
-
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