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參數(shù)資料
| 型號： | LPD200 |
| 英文描述： | HIGH PERFORMANCE PHEMT |
| 中文描述： | 高性能PHEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 61K |
| 代理商： | LPD200 |
LPD200P70
P
ACKAGED
H
IGH
D
YNAMIC
R
ANGE
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
FEATURES
20 dBm Output Power at 1-dB Compression at 18 GHz
9.5 dB Power Gain at 18 GHz
16 dB Small Signal Gain at 2 GHz
0.8 dB Noise Figure at 2 GHz
DESCRIPTION AND APPLICATIONS
The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
μ
m by 200
μ
m Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPD200’s active areas are
passivated with Si
3
N
4
, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems and other types of commercial wireless systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25
°
C*
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current**
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
I
DSS
P-1dB
G-1dB
PAE
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 11 dBm
V
DS
= 3.3 V; I
DS
= 25% I
DSS
;
f=2 GHz
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 1 mA
I
GS
= 1 mA
40
19
8
85
mA
dBm
dB
%
20
9.5
50
Noise Figure
NF
0.7
dB
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
125
80
1
mA
mS
μ
A
V
V
60
15
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P70–2 = 66-85 mA
-0.25
-6
-0.8
-7
-1.5
|V
BDGD
|
I
GD
= 1 mA
-8
-9
V
相關PDF資料 |
PDF描述 |
|---|---|
| LPD200MX | HIGH PERFORMANCE PHEMT |
| LPD200SOT343 | DIODE DUAL 1600V 2X43A TO-247AD |
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| LPQ113 | 110 Watts |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LPD200MX | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:HIGH PERFORMANCE PHEMT |
| LPD200P70 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:PACKAGED HIGH DYNAMIC RANGE PHEMT |
| LPD200P70-2 | 制造商:FILTRN 功能描述: 制造商:Filtronic plc 功能描述: |
| LPD200SOT343 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:PACKAGED HIGH DYNAMIC RANGE PHEMT |
| LPD2040-L3-PF | 制造商:LIGITEK 制造商全稱:LIGITEK electronics co., ltd. 功能描述:PHOTO DIODE SILICON PIN LED LAMPS |
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