參數(shù)資料
型號(hào): LRS1361F
英文描述: MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|72PIN|PLASTIC
中文描述: 混合存儲(chǔ)器|靜態(tài)存儲(chǔ)器EEPROM中|混合|的BGA | 72PIN |塑料
文件頁(yè)數(shù): 4/43頁(yè)
文件大?。?/td> 1326K
代理商: LRS1361F
LRS1382
2
1. Description
The LRS1382 is a combination memory organized as 2,097,152 x16 bit flash memory and 524,288 x16 bit static RAM in one
package.
Features
- Power supply
- Operating temperature
- Not designed or rated as radiation hardened
2.7V to 3.3V
-25°C to +85°C
- 72pin CSP (LCSP072-P-0811) plastic package
- Flash memory has P-type bulk silicon, and SRAM has P-type bulk silicon
Flash Memory
- Access Time
- Power supply current (The current for F-V
CC
pin and F-V
PP
pin)
Read
Word write
Block erase
Reset Power-Down
85 ns
(Max.)
25 mA
60 mA
30 mA
25 μA
(Max. t
CYCLE
= 200ns, CMOS Input)
(Max.)
(Max.)
(Max. F-RST = GND ± 0.2V,
I
OUT
(F-RY/BY) = 0mA)
(Max. F-CE = F-RST = F-V
CC
± 0.2V)
Standby
25 μA
- Optimized Array Blocking Architecture
Eight 4K-word Parameter Blocks
Sixty-Three 32K-word Main Blocks
Top Parameter Location
- Extended Cycling Capability
100,000 Block Erase Cycles
1,000 Block Erase Cycles and total 80 hours (F-V
PP
= 11.7V to 12.3V)
- Enhanced Automated Suspend Options
Word Write Suspend to Read
Block Erase Suspend to Word Write
Block Erase Suspend to Read
(F-V
PP
= 1.65V to 3.3V)
SRAM
- Access Time
- Power Supply current
Operating current
70 ns
(Max.)
50 mA
8 mA
25 μA
25 μA
(Max. t
RC
, t
WC
= Min.)
(Max. t
RC
, t
WC
= 1μs, CMOS Input)
(Max.)
(Max. S-V
CC
= 3.0V)
Standby current
Data retention current
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