參數(shù)資料
型號(hào): LRS1392
英文描述: Flash ROM
中文描述: 閃存ROM
文件頁數(shù): 13/43頁
文件大?。?/td> 1326K
代理商: LRS1392
LRS1382
11
5.3 Functions of Block Lock and Block Lock-Down
Notes:
1. DQ
0
= 1: a block is locked; DQ
0
= 0: a block is unlocked.
DQ
1
= 1: a block is locked-down; DQ
1
= 0: a block is not locked-down.
2. Erase and program are general terms, respectively, to express: block erase, full chip erase and (page buffer) program
operations.
3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is, [001] (F-WP = 0) or [101]
(F-WP = 1), regardless of the states before power-off or reset operation.
4. When F-WP is driven to V
IL
in [110] state, the state changes to [011] and the blocks are automatically locked.
5.4 Block Locking State Transitions upon Command Write
(4)
Notes:
1. “Set Lock” means Set Block Lock Bit command, “Clear Lock” means Clear Block Lock Bit command and “Set Lock-
down” means Set Block Lock-Down Bit command.
2. When the Set Block Lock-Down Bit command is written to the unlocked block (DQ
0
= 0), the corresponding block is
locked-down and automatically locked at the same time.
3. “No Change” means that the state remains unchanged after the command written.
4. In this state transitions table, assumes that F-WP is not changed and fixed V
IL
or V
IH
.
Current State
Erase/Program Allowed
(2)
State
F-WP
DQ
1(1)
0
0
DQ
0(1)
0
1
State Name
[000]
0
0
Unlocked
Locked
Yes
No
[001]
(3)
[011]
[100]
0
1
1
1
0
0
1
0
1
Locked-down
Unlocked
Locked
No
Yes
No
[101]
(3)
[110]
(4)
[111]
1
1
0
Lock-down Disable
Yes
1
1
1
Lock-down Disable
No
Current State
Result after Lock Command Written (Next State)
State
F-WP
DQ
1
DQ
0
Set Lock
(1)
Clear Lock
(1)
Set Lock-down
(1)
[000]
0
0
0
[001]
No Change
[011]
(2)
[001]
0
0
1
No Change
(3)
No Change
[000]
[011]
[011]
0
1
1
No Change
No Change
[100]
1
0
0
[101]
No Change
[111]
(2)
[111]
[101]
1
0
1
No Change
[100]
[110]
1
1
0
[111]
No Change
[111]
(2)
No Change
[111]
1
1
1
No Change
[110]
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