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參數(shù)資料
| 型號： | LS1014AB |
| 英文描述： | Dual Peripheral Driver |
| 中文描述： | 雙外圍驅(qū)動器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 151K |
| 代理商： | LS1014AB |
www.vishay.com
2
Document Number 85628
Rev. 1.3, 13-Apr-04
VISHAY
LS101A / 101B / 101C
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Breakdown Voltage
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Test condition
Symbol
R
thJA
Value
320
Unit
K/W
on PC board
50 mmx50 mmx1.6 mm
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
- 65 to + 150
°C
Test condition
Part
LS101A
Symbol
V
(BR)R
V
(BR)R
V
(BR)R
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
D
C
D
C
D
Min
60
Typ.
Max
Unit
V
I
R
= 10
μ
A
LS101B
50
V
LS101C
40
V
Leakage current
V
R
= 50 V
V
R
= 40 V
V
R
= 30 V
I
F
= 1 mA
LS101A
200
nA
LS101B
200
nA
LS101C
200
nA
Forward voltage drop
LS101A
0.41
V
LS101B
0.4
V
LS101C
0.39
V
I
F
= 15 mA
LS101A
1
V
LS101B
0.95
V
LS101C
0.9
V
Diode capacitance
V
R
= 0 V, f = 1 MHz
LS101A
2.0
pF
LS101B
2.1
pF
LS101C
2.2
pF
Fig. 1 Reverse Current vs. Reverse Voltage
I
R
-
A
μ
0.01
0.1
1
10
100
0
5
10 15 20 25 30 35 40 45 50
V
R
- Reverse Voltage ( V )
16204
T
j
=25°C
T
j
=50°C
T
j
=75°C
T
j
=100°C
T
j
=125°C
T
j
=150°C
Fig. 2 Diode Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
5
10 15 20 25 30 35 40 45 50
V
R
– Reverse Voltage ( V )
16205
C
D
Tj=25
°
C
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