參數(shù)資料
型號: LS103A-GS18
廠商: Vishay Intertechnology,Inc.
英文描述: Small Signal Schottky Barrier Diodes
中文描述: 小信號肖特基二極管
文件頁數(shù): 2/5頁
文件大小: 156K
代理商: LS103A-GS18
www.vishay.com
2
Document Number 85631
Rev. 1.2, 22-Apr-04
VISHAY
LS103A / 103B / 103C
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Breakdown Voltage
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
250
Unit
K/W
l = 4mm, T
L
= constant
Junction temperature
125
°C
Storage temperature range
- 65 to + 150
°C
Test condition
Part
LS103A
Symbol
V
(BR)R
V
(BR)R
V
(BR)R
I
R
I
R
I
R
V
F
V
F
C
D
t
rr
Min
40
Typ.
Max
Unit
V
I
R
= 10
μ
A
LS103B
30
V
LS103C
20
V
μ
A
μ
A
μ
A
V
Leakage current
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
I
F
= 20 mA
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 50 to 200 mA,
recover to 0.1 I
R
LS103A
5
LS103B
5
LS103C
5
Forward voltage drop
0.37
0.6
V
Diode capacitance
50
pF
Reverse recovery time
10
ns
Fig. 1 Forward Current vs. Forward Voltage
I
F
0.001
0.01
0.100
1.000
10.10
100100
1001000
0
100 200 300 400 500 600 700 800 900 1000
VF– Forward Voltage ( mV )
16765
1
Fig. 2 Forward Current vs. Forward Voltage
I
0
1
2
3
4
5
0.0
0.5
V
F
– Forward Voltage ( V )
1.0
1.5
2.0
16766
F
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