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FEATURES
HIGH INPUT IMPEDANCE
HIGH TRANSCONDUCTANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
r
Gs
= 100G
Y
FS
= 30,000μS
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150 °C
-55 to +125 °C
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Drain Current
Maximum Voltages
Drain to Source
1
Gate to Source
200mW
I
D
= 25mA
V
DSO
= 20V
V
GSS
= 20V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
V
DS
Drain to Source Voltage
V
GS
Gate to Source Voltage
g
fs
Common Source Forward Transconductance
g
oss
Common Source Output Conductance
r
Gs
Gate to Source Input Resistance
C
ISS
Input Capacitance
C
RSS
Reverse Transfer Capacitance
MIN
-20
-12
30,000
100
TYP MAX
-10
300
8
1.5
UNITS
V
V
μS
μS
G
pF
pF
CONDITIONS
I
DS
= 100μA, V
GS
= 0V
I
DS
= 10mA, V
gs
= -10V
2,3
I
DS
= 10mA, V
DS
= -10V,
f
= 1kHz
I
DS
= 10mA, V
DS
= -10V,
f
= 1kHz
V
GS
= 0 to 20V, T
J
to 125 °C
I
DS
= 10mA, V
DS
= -10V
I
DS
= 10mA, V
DS
= -10V
-7
e
n
Noise Voltage
25
μV
I
DS
= 10mA, V
DS
= 10V
BW = 50 to 15kHz
LS320
HIGH INPUT IMPEDANCE
BiFET AMPLIFIER
Linear Integrated Systems
PACKAGE OPTIONS
G
S
D
TO-92
BOTTOM VIEW
1
2
3
D S G
1
2
3
SOT-23
TOP VIEW
D
S
G
FUNCTIONAL SCHEMATIC
S
S
D
2
1
3
BOTTOM VIEW
TO-72
4
G
1.
2.
3.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
The gate to source voltage must never exceed 100V, t < 10ms.
Additional screening available
n or
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261