參數(shù)資料
型號(hào)： LS5912C
廠商： Linear Integrated Systems
英文描述： IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
中文描述： 低噪聲寬頻帶改進(jìn)整體式雙N溝道結(jié)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 337K
代理商： LS5912C
FEATURES
Improved Replacement for SILICONIX, FAIRCHILD, &
NATIONAL: 2N5911 & 2N5912
LOW NOISE (10kHz)
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
e
n
~ 4nV/
√
Hz
g
fs
≥
4000μS
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150 °C
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
500mW
50mA
-25V
Gate to Source
-25V
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS5911
MIN MAX
LS5912
MIN MAX
LS5912C
MIN MAX
SYMBOL
CHARACTERISTIC
TYP
UNIT
CONDITIONS
GS2
GS1
V
V
Differential Gate to Source
Cutoff Voltage
Differential Gate to Source
Cutoff Voltage Change with
Temperature
Gate to Source Saturation
Current Ratio
10
15
40
mV
V
DG
= 10V, I
D
= 5mA
T
V
V
GS2
GS1
20
40
40
μV/°C
V
DG
= 10V, I
D
= 5mA
T
A
= -55 to +125°C
DSS2
DSS1
I
I
0.95
1
0.95
1
0.95
1
%
V
DS
= 10V, V
GS
= 0V
G2
G1
I
I
Differential Gate Current
20
20
20
nA
V
DG
= 10V, I
D
= 5mA
T
A
= +125°C
V
DS
= 10V, I
D
= 5mA
f
= 1kHz
V
DG
= 5V to 10V
I
D
= 5mA
fs2
fs1
g
g
Forward Transconductance
Ratio
Common Mode Rejection
Ratio
0.95
1
0.95
1
0.95
1
%
CMRR
85
dB
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
SOIC-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2
1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2
5
BOTTO-78
1
2
3
6
7
D1
G1
S1
S2
D2
G2
1
3
2
SOT-23
TOP VIEW
6
4
5
S2
D2
G2
G1
D1
S1
5
BOTTOM VIEW
TO-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2
Linear Integrated Systems
LS5911 LS5912 LS5912C
IMPROVED LOW NOISE
WIDEBAND MONOLITHIC
DUAL N-CHANNEL JFET
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS5911
MIN MAX
-25
-1
-0.3
7
LS5912
MIN MAX
-25
-1
-0.3
7
LS5912C
MIN MAX
-25
-1
-0.3
7
SYM.
CHARACTERISTIC
TYP
UNIT
CONDITIONS
BV
GSS
V
GS(off)
V
GS(F)
V
GS
I
DSS
I
GSS
I
G
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Gate to Source Voltage
Drain to Source Saturation Current
3
Gate Leakage Current
Gate Operating Current
I
G
= -1μA, V
DS
= 0V
V
DS
= 10V, I
D
= 1nA
I
G
= 1mA, V
DS
= 0V
V
DG
= 10V, I
G
= 5mA
V
DS
= 10V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 10V, I
D
= 5mA
-5
-4
40
-50
-50
-5
-4
40
-50
-50
-5
-4
40
-50
-50
0.7
-1
-1
V
mA
pA
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
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參數(shù)描述
LS5912C_PDIP 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5912C_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5912C_SOT-23 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5912C_TO-71 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5923-1 制造商:WASHERS 功能描述:
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