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參數資料
| 型號： | LS830-3 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 超低漏低漂移整體式雙N溝道結型場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 30K |
| 代理商： | LS830-3 |
Linear Integrated Systems
FEATURES
ULTRA LOW DRIFT
ULTRA LOW LEAKAGE
LOW NOISE
LOW CAPACITANCE
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
S1
3
BOTTOM VIEW
2
6
22 X 20 MILS
G1 S2
S1 G2
D2
D1
G1
S2
G2
D1
D2
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
|
V
GS1-2
/
T| max. Drift vs. Temperature
LS830 LS831 LS832 LS833 UNITS CONDITIONS
5
10
20
75
μ
V/
°
C
V
DG
= 10V
T
A
= -55
°
C to +125
°
C
V
DG
= 10V
I
D
= 30
μ
A
|V
GS1-2
| max.
-I
G
max
-I
G
max
-I
GSS
-I
GSS
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
25
0.1
0.1
0.2
0.5
25
0.1
0.1
0.2
0.5
25
0.1
0.1
0.2
0.5
25
0.5
0.5
1.0
1.0
mV
pA
nA
pA
nA
I
D
= 30
μ
A
T
A
= +125
°
C
V
GS
= 0
T
A
= +125
°
C
V
GS
= -20V
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
LS830 LS831 LS832 LS833
|
V
GS1-2
/
T|= 5
μ
V/
°
C max.
I
G
= 80fA TYP.
e
n
= 70nV/
√
Hz TYP.
C
ISS
= 3pf MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +150
°
C
+150
°
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
-I
G
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
40V
10mA
10
μ
A
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125
°
C
SYMBOL
BV
GSS
BV
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
TYP.
60
--
MAX.
--
--
UNITS CONDITIONS
V
V
DS
= 0
V
I
G
= 1nA
I
D
= 1nA
I
D
= 0
I
S
= 0
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
70
50
--
300
100
1
500
200
5
μ
mho
μ
mho
%
V
DG
= 10V
V
DG
= 10V
V
GS
= 0
I
D
= 30
μ
A
f= 1kHz
f= 1kHz
I
DSS
|I
DSS1-2
/I
DSS
|
60
--
400
2
1000
5
μ
A
%
V
DG
= 10V
V
GS
= 0
V
GS
(off) or V
P
V
GS
0.6
--
2
--
4.5
4
V
V
V
DS
= 10V
V
DG
= 10V
I
D
= 1nA
I
D
= 30
μ
A
I
GGO
--
1
--
pA
V
GG
= 20V
相關PDF資料 |
PDF描述 |
|---|---|
| LS831 | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS832 | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS833 | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS840 | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET |
| LS840-2 | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LS8307M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| LS831 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS831_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS831_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS831_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
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