ELECTRICAL CHARACTERISTICS V S = ±15V, V" />
參數(shù)資料
型號(hào): LT1101SW#PBF
廠商: Linear Technology
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 0K
描述: IC PREC INSTRMNT-AMP SNGL 16SOIC
標(biāo)準(zhǔn)包裝: 47
放大器類型: 儀表
電路數(shù): 1
轉(zhuǎn)換速率: 0.1 V/µs
增益帶寬積: 37kHz
電流 - 輸入偏壓: 6nA
電壓 - 輸入偏移: 250µV
電流 - 電源: 94µA
電壓 - 電源,單路/雙路(±): 2.2 V ~ 36 V,±1.1 V ~ 18 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 16-SO
包裝: 管件
產(chǎn)品目錄頁(yè)面: 1323 (CN2011-ZH PDF)
5
LT1101
1101fa
ELECTRICAL CHARACTERISTICS V
S = ±15V, VCM = 0V, Gain = 10 or 100, 0°C ≤ TA ≤ 70°C, unless
otherwise noted.
LT1101AC
LT1101C/S
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
GE
Gain Error
G = 100, VO = ±10V, RL = 50k
0.012
0.055
0.014
0.080
%
G = 100, VO = ±10V, RL = 2k
0.018
0.085
0.020
0.100
%
G = 10, VO = ±10V, RL = 50k or 2k
0.009
0.055
0.010
0.080
%
TCGE
Gain Error Drift
G = 100, RL = 50k
1
4
1
5
ppm/°C
(Note 2)
G = 100, RL = 2k
2
7
2
9
ppm/°C
G = 10, RL = 50k or 5k
1
4
1
5
ppm/°C
GNL
Gain Nonlinearity
G = 100, RL = 50k
9
25
10
35
ppm
G = 100, RL = 2k
33
75
36
100
ppm
G = 10, RL = 50k or 2k
4
10
4
11
ppm
VOS
Input Offset Voltage
70
250
85
350
V
LT1101SW
300
800
V
VOS/T Input Offset Voltage Drift
(Note 2)
0.4
2.0
0.5
2.8
V/°C
LT1101SW
1.2
4.5
V/°C
lOS
Input Offset Current
0.14
0.70
0.17
1.10
nA
IOS/T
Input Offset Current Drift
(Note 2)
0.5
4.0
0.8
7.0
pA/°C
IB
Input Bias Current
6
9
6
11
nA
IB/T
Input Bias Current Drift
(Note 2)
10
25
10
30
pA/°C
CMRR
Common Mode
G = 100, VCM = –14.4V to 13V
98
112
96
112
dB
Rejection Ratio
G = 100, VCM = –13V to 11.5V
82
100
80
99
dB
PSRR
Power Supply
VS = 2.5, –0.1V to ±18V
100
112
97
112
dB
Rejection Ratio
IS
Supply Current
98
148
100
170
A
VO
Maximum 0utput
RL = 50k
±12.5
±14.1
±12.5
±14.1
V
Voltage Swing
RL = 2k
±10.5
±13.0
±10.5
±13.0
V
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