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參數(shù)資料
| 型號(hào)： | LT1113C |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Dual Low Noise, Precision, JFET Input Op Amps |
| 中文描述： | 雙低噪聲，高精度，JFET輸入運(yùn)算放大器 |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 244K |
| 代理商： | LT1113C |
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10
LT1113
U
S
A
O
PPLICATI
U
U
The gain therefore is 1 + C
F
/C
S
. For unity gain, C
F
should
equal the transducer capacitance plus the input capaci-
tance of the LT1113 and R
F
should equal R
S
. In the
noninverting mode example, the transducer current is
converted to a change in voltage by the transducer capaci-
tance; this voltage is then buffered by the LT1113 with a
gain of 1 + R1/R2. A DC path is provided by R
S
, which is
either the transducer impedance or an external resistor.
Since R
S
is usually several orders of magnitude greater
than the parallel combination of R1 and R2, R
B
is added to
balance the DC offset caused by the noninverting input
bias current and R
S
. The input bias currents, although
small at room temperature, can create significant errors
over increasing temperature, especially with transducer
resistances of up to 100M or more. The optimum value for
R
B
is determined by equating the thermal noise (4kTR
S
) to
the current noise (2qI
B
) times R
S2
. Solving for R
S
results
in R
B
= R
S
= 2V
T
/I
B
V
kT
q
mV at
26
C
T
=
=
°
25
.
A parallel capacitor, C
B
, is used to cancel the phase shift
caused by the op amp input capacitance and R
B
.
Reduced Power Supply Operation
The LT1113 can be operated from
±
5V supplies for lower
power dissipation resulting in lower I
B
and noise at the
expense of reduced dynamic range. To illustrate this
benefit, let’s look at the following example:
An LT1113CS8 operates at an ambient temperature of
25
°
C with
±
15V supplies, dissipating 318mW of power
(typical supply current = 10.6mA for the dual). The SO-8
package has a
θ
JA
of 190
°
C/W, which results in a die
temperature increase of 60.4
°
C or a room temperature die
operating temperature of 85.4
°
C. At
±
5V supplies, the die
temperature increases by only one third of the previous
amount or 20.1
°
C resulting in a typical die operating
temperature of only 45.1
°
C. A 40 degree reduction of die
temperature is achieved at the expense of a 20V reduction
in dynamic range. If no DC correction resistor is used at
the input, the input referred offset will be the input bias
current at the operating die temperature times the trans-
ducer resistance (refer to Input Bias and Offset Currents vs
Chip Temperature graph in Typical Performance Charac-
teristics section). A 100mV input V
OS
is the result of a 1nA
I
B
(at 85
°
C) dropped across a 100M transducer resis-
tance; at
±
5V supplies, the input offset is only 28mV (I
B
at
45
°
C is 280pA). Careful selection of a DC correction
–
+
R2
OUTPUT
R
B
C
B
R1
C
S
R
S
C
B
C
S
R
B
= R
S
R
S
> R1
OR R2
TRANSDUCER
–
+
OUTPUT
C
F
C
B
R
B
C
B
= C
F
C
S
R
B
= R
F
R
S
Q = CV; d
t = I = C
R
F
C
S
R
S
TRANSDUCER
1113 F02
dV
d
t
Figure 2. Noninverting and Inverting Gain Configurations
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1113CN8 | 功能描述:IC PREC OP-AMP JFET DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 放大器類型:通用 電路數(shù):2 輸出類型:滿擺幅 轉(zhuǎn)換速率:350 V/µs 增益帶寬積:180MHz -3db帶寬:320MHz 電流 - 輸入偏壓:12.5µA 電壓 - 輸入偏移:800µV 電流 - 電源:15mA 電流 - 輸出 / 通道:85mA 電壓 - 電源，單路/雙路(±):2.5 V ~ 12.6 V，±1.25 V ~ 6.3 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| LT1113CN8#PBF | 功能描述:IC PREC OP-AMP JFET DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:- 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:45nA 電壓 - 輸入偏移:2000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:40mA 電壓 - 電源，單路/雙路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR) 其它名稱:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
| LT1113CS8 | 功能描述:IC PREC OP-AMP JFET DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 放大器類型:J-FET 電路數(shù):2 輸出類型:- 轉(zhuǎn)換速率:3.5 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:30pA 電壓 - 輸入偏移:2000µV 電流 - 電源:200µA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:0°C ~ 70°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 |
| LT1113CS8#PBF | 功能描述:IC PREC OP-AMP JFET DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:- 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:45nA 電壓 - 輸入偏移:2000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:40mA 電壓 - 電源，單路/雙路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR) 其它名稱:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
| LT1113CS8#PBF | 制造商:Linear Technology 功能描述:IC OP-AMP 5.6MHZ 3.9V/ SOIC-8 |
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