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參數(shù)資料
| 型號： | LT1113MJ8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | Dual Low Noise, Precision, JFET Input Op Amps |
| 中文描述： | DUAL OP-AMP, 3300 uV OFFSET-MAX, 5.6 MHz BAND WIDTH, CDIP8 |
| 封裝： | 0.300 INCH, HERMETIC SEALED, CERDIP-8 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 244K |
| 代理商： | LT1113MJ8 |
8
LT1113
–12 –10 –8
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (
μ
V/
°
C)
–2
0
4
6
8
–4
0
10
20
30
40
P
1113 G19
V
S
=
±
15V
150 OP AMPS
75 J8
2
–6
Distribution of Offset Voltage Drift
with Temperature (J8)
Distribution of Offset Voltage Drift
with Temperature (N8, S8)
–25 –20 –15
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (
μ
V/
°
C)
0
5
15
20 25
–5
0
10
20
30
40
P
1113 G20
V
S
=
±
15V
10
–10
356 OP AMPS
100 N8
78 S8
THD and Noise vs Frequency for
Noninverting Gain
FREQUENCY (Hz)
10
0
C
20
60
80
120
160
100
10k
100k
10M
1113 G24
1k
1M
40
100
140
V
S
=
±
15V
R
L
= 1k
V
O
= 10V
P-P
T
A
= 25
°
C
LIMITED BY
THERMAL INTERACTION
LIMITED BY
PIN-TO-PIN
CAPACITANCE
Channel Separation vs Frequency
THD and Noise vs Output
Amplitude for Noninverting Gain
THD and Noise vs Output
Amplitude for Inverting Gain
* See LT1115 data sheet for definition of CCIF testing.
Warm-Up Drift
FREQUENCY (Hz)
T
20
1k
10k
20k
1113 G23
100
Z
L
= 2k
15pF
V
O
= 20V
A
= –1, –10, –100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
A
V
= –1
1
0.1
0.01
0.001
0.0001
A
V
= –100
A
V
= –10
NOISE FLOOR
THD and Noise vs Frequency for
Inverting Gain
FREQUENCY (Hz)
T
20
1k
10k
20k
1113 G22
100
1
0.1
0.01
0.001
0.0001
Z
L
= 2k
15pF
V
O
= 20V
A
= +1, +10, +100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
NOISE FLOOR
A
V
= 1
A
V
= 100
A
V
= 10
OUTPUT SWING (V
P-P
)
T
1
0.1
0.01
0.001
0.0001
0.3
10
30
1113 G25
1
A
V
= 1
Z
L
= 2k
15pF, f
= 1kHz
A
= +1, +10, +100
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
A
V
= 100
A
V
= 10
NOISE FLOOR
0.001
OUTPUT SWING (V
P-P
)
I
20m
1
30
1113 G27
0.1
0.0001
V
S
=
±
15V
R
L
= 2k
T
A
= 25
°
C
0.01
0.1
10
A
V
=
±
10
CCIF IMD Test (Equal Amplitude
Tones at 13kHz, 14kHz)*
C
HARA TERISTICS
U
A
TYPICAL PERFOR
CE
OUTPUT SWING (V
P-P
)
T
1
0.1
0.01
0.001
0.0001
0.3
10
30
1113 G26
1
Z
L
= 2k
15pF, f
= 1kHz
A
= –1, –10, –100
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
A
V
= –1
A
V
= –100
A
V
= –10
NOISE FLOOR
TIME AFTER POWER ON (MINUTES)
0
C
μ
V
500
400
300
200
100
0
1
2
3
5
1113 G21
4
V
S
=
±
15V
T
A
= 25
°
C
S8 PACKAGE
J8 PACKAGE
N8 PACKAGE
IN STILL AIR (S8 PACKAGE
SOLDERED ONTO BOARD)
6
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| LT1114ACN | 功能描述:IC PREC OP-AMP LOWPWR QUAD 14DIP RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:50 系列:- 放大器類型:J-FET 電路數(shù):2 輸出類型:- 轉(zhuǎn)換速率:3.5 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:30pA 電壓 - 輸入偏移:2000µV 電流 - 電源:200µA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:0°C ~ 70°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 |
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