For more information www.linear.com/LT1122 ELECTRICAL CHARACTERISTICS " />
參數(shù)資料
型號(hào): LT1122DCN8
廠商: Linear Technology
文件頁數(shù): 8/14頁
文件大小: 0K
描述: IC OP-AMP JFET FAST-SETTLNG 8DIP
標(biāo)準(zhǔn)包裝: 50
放大器類型: J-FET
電路數(shù): 1
轉(zhuǎn)換速率: 75 V/µs
增益帶寬積: 13MHz
電流 - 輸入偏壓: 12pA
電壓 - 輸入偏移: 130µV
電流 - 電源: 7.8mA
電壓 - 電源,單路/雙路(±): ±5 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 通孔
封裝/外殼: 8-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 8-PDIP
包裝: 管件
LT1122
3
1122fb
For more information www.linear.com/LT1122
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, VCM = 0V unless otherwise noted. (Note 2)
SYMBOL PARAMETER
CONDITIONS
LT1122AM/BM
LT1122AC/BC
LT1122CM/DM
LT1122CC/DC
LT1122CS/DS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
VOS
Input Offset Voltage
120
600
130
900
V
IOS
Input Offset Current
4
40
5
50
pA
IB
Input Bias Current
10
75
12
100
pA
Input Resistance
Differential
Common Mode
VCM = –10V to 8V
VCM = 8V to 11V
1012
1011
1012
1011
Ω
Input Capacitance
4
pF
SR
Slew Rate
AV = –1
60
80
50
75
V/s
Settling Time (Note 2)
10V to 0V, –10V to 0V
100% Tested: A- and C-Grades to 1mV at Sum Node
B- and D-Grades to 1mV at Sum Node
All Grades to 0.5mV at Sum Node
340
350
450
540
350
360
470
590
ns
GBW
Gain-Bandwidth Product Power
Bandwidth
VOUT = 20VP-P
14
1.2
13
1.1
MHz
AVOL
Large-Signal Voltage Gain
VOUT = ±10V, RL = 2k
VOUT = ±10V, RL = 600
180
130
500
250
150
110
450
220
V/mV
CMRR
Common-Mode Rejection Ratio VCM = ±10V
83
99
80
98
dB
Input Voltage Range
(Note 4)
±10.5 ±11
V
PSRR
Power Supply Rejection Ratio
VS = ±10V to ±18V
86
103
82
101
dB
Input Noise Voltage
0.1Hz to 10Hz
3.0
3.3
VP-P
Input Noise Voltage Density
fO = 100Hz
fO = 10kHz
25
14
27
15
nV/√Hz
Input Noise Current Density
fO = 100Hz, fO = 10kHz
2
fA/√Hz
VOUT
Output Voltage Swing
RL = 2k
RL = 600
±12
±11.5
±12.5
±12
±11.5
±12.5
±12
V
IS
Supply Current
7.5
10
7.8
11
mA
Minimum Supply Voltage
(Note 5)
±5
V
Offset Adjustment Range
RPOT ≥ 10k, Wiper to V+
±4
±10
±4
±10
mV
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