參數(shù)資料
型號(hào): LT1123CZ
廠商: LINEAR TECHNOLOGY CORP
元件分類(lèi): 基準(zhǔn)電壓源/電流源
英文描述: Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection
中文描述: 5 V FIXED POSITIVE LDO REGULATOR, 0.75 V DROPOUT, PBCY3
封裝: PLASTIC, TO-92, 3 PIN
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 241K
代理商: LT1123CZ
6
LT1123
5.5V
R
D
Power (LT1123)
Power (R
D
)
R
D
Power (LT1123)
Power (R
D
)
R
D
Power (LT1123)
Power (R
D
)
R
D
Power (LT1123)
Power (R
D
)
R
D
Power (LT1123)
Power (R
D
)
R
D
Power (LT1123)
Power (R
D
)
120
0.05W
0.12W
150
0.05W
0.13W
180
0.06W
0.16W
240
0.06W
0.17W
270
0.20W
0.07W
330
0.22W
0.07W
43
0.14W
0.32W
51
0.15W
0.35W
75
0.14W
0.36W
91
0.15W
0.42W
110
0.16W
0.47W
130
0.17W
0.52W
––
––
––
20
0.37W
0.76W
27
0.38W
0.89W
36
0.38W
0.97W
43
0.41W
1.11W
51
0.43W
1.25W
6.0V
7.0V
8.0V
9.0V
10.0V
INPUT
VOLTAGE
0 – 4A
0.75V
OUTPUT CURRENT:
DROPOUT VOLTAGE:
0 – 1A
0.3V
0 – 2A
0.4V
R
D
Selection Chart
Note that in some conditions R
D
may be replaced with a
short. This is possible in circuits where an overload is
unlikely and the input voltage and drive requirements are
low. See the section on Thermal Considerations for more
information.
U
S
A
O
PPLICATI
U
U
Figure 4. R
D
Resistor Value
SELECTING R
D
In order to select R
D
the user should first choose the value
of drive current that will give the required value of output
current. For circuits using the MJE1123 as a pass transis-
tor this can be done using the graph of Dropout Voltage vs
Output Current (Figure 2). For example, 20mA of drive
current will guarantee a dropout voltage of 0.3V at 1A of
output current. For circuits using transistors other than
the MJE1123 the user must characterize the transistor to
determine the drive current requirements. In general it is
recommended that the user choose the lowest value of
drive current that will satisfy the output current require-
ments. This will minimize the stress on circuit compo-
nents during overload conditions.
Figure 4 can be used to select the value of R
D
based on the
required drive current and the minimum input voltage.
Curves are shown for 20mA, 50mA, and 120mA drive
current corresponding to the specified base drive currents
for the MJE1123. The data for the curves was generated
using the following formula:
R
D
= (V
IN
– V
BE
– V
DRIVE
)/(I
DRIVE
+ 1mA)
where V
IN
= the minimum input voltage to the circuit
V
BE
= the maximum emitter/base voltage of the
PNP pass transistor
V
DRIVE
= the maximum Drive pin voltage of the
LT1123
I
DRIVE
= the minimum drive current required
The current through R
B
is assumed to be 1mA
V
IN
6
R
D
8
1k
LT1123 F04
10
100
7
15
14
13
12
11
10
9
I
DRIVE
= 20mA
I
DRIVE
= 120mA
I
DRIVE
= 50mA
5
The following assumptions were made in calculating the
data for the curves. Resistors are 5% tolerance and the
values shown on the curve are nominal.
For 20mA drive current assume:
V
BE
= 0.95V at I
C
= 1A
V
DRIVE
= 1.75V
For 50mA drive current assume:
V
BE
= 1.2V at I
C
= 2A
V
DRIVE
= 1.9V
For 120mA drive current assume:
V
BE
= 1.4V at I
C
= 4A
V
DRIVE
= 2.1V
The R
D
Selection Chart lists the recommended values for
R
D
for the most useful range of input voltage and output
current. The chart includes a number for power dissipa-
tion for the LT1123 and R
D
.
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