參數(shù)資料
型號(hào): LT1308IS8
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: Single Cell High Current Micropower 600kHz Boost DC/DC Converter
中文描述: SWITCHING REGULATOR, 750 kHz SWITCHING FREQ-MAX, PDSO8
封裝: 0.150 INCH, PLASTIC, SO-8
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 266K
代理商: LT1308IS8
7
LT1308
APPLICATIO
S I
N
FOR
ATIO
U
DECT PHONES
The DECT standard specifies a transmit pulse 416
μ
s in
duration. The LT1308 is capable of delivering a 400mA
pulse load from a 1.2V input with output capacitance of
100
μ
F. Figure 11 depicts V
OUT
transient response of
Figure 6’s circuit, configured for a 3.3V output by chang-
ing resistor R1 to 169k. Figure 12 shows detail of one
transmit pulse at a higher sweep speed.
W
U
V
IN
SW
FB
LT1308
L1
4.7
μ
H
D1
MBRS120
LBO
LBI
47k
100k
5V/1A OR
3.3V/300mA
R1
33nF
1308F06
C1
10
μ
F
CERAMIC
C2
100
μ
F
NiCd
OR
Li-Ion
CELL
V
C
GND
SHDN
L1:TOKO 636CY4R7M
COILTRONICS CTX5-1
FOR V
OUT
= 5V: R1 = 309k
FOR V
OUT
= 3.3V: R1 = 169k
+
Figure 6. DC/DC Converter for GSM/DECT Application
1ms/DIV
1308 F08
100
μ
s/DIV
1308 F07
Figure 7. GSM Load Transient Response.
100mA to 1A Transient Response for Figure 6’s Circuit.
Pulse Width = 577
μ
s
V
200mV/DIV
AC COUPLED
V
IN
= 3.6V
I
L
, 1A/DIV
1A
100mA
V
IN
= 3.6V
100mA
V
200mV/DIV
AC COUPLED
1A
Figure 8. GSM Load Transient Response. Slower
Sweep Speed (1ms/DIV) Shows V
OUT
over Several
Transmit Pulses
100mA
I
LOAD
1A
V
200mV/DIV
AC COUPLED
V
IN
= 2.7V
1ms/DIV
1308 F09
Figure 9. GSM Load Transient Response.
At Low V
IN
, Large Output Capacitor (2200
μ
F)
Serves to Hold up V
OUT
100
μ
s/DIV
1308 F09
Figure 12. DECT Load Transient Response.
Faster Sweep Speed (100
μ
s/DIV) Details V
OUT
and
Inductor Current of Single DECT Transmit Pulse
V
200mV/DIV
AC COUPLED
400mA
50mA
I
L
, 1A/DIV
2ms/DIV
1308 F11
V
200mV/DIV
AC COUPLED
400mA
50mA
I
LOAD
Figure 11. DECT Load Transient Response.
With a Single NiCd Cell the LT1308 Provides 3.3V
with 400mA Pulsed Load. Pulse Width = 416
μ
s
V
200mV/DIV
AC COUPLED
I
L
, 1A/DIV
1A
100mA
I
LOAD
V
IN
= 2.7V
500
μ
s/DIV
1308 F10
Figure 10. GSM Load Transient Response.
Faster Sweep Speed (500
μ
s/DIV) Details V
OUT
and Inductor Current of One Transmit Pulse
V
IN
= 1.2V
V
IN
= 1.2V
I
LOAD
I
LOAD
I
LOAD
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