參數(shù)資料
型號(hào): LT1375HV
廠商: Linear Technology Corporation
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁數(shù): 15/28頁
文件大?。?/td> 232K
代理商: LT1375HV
15
LT1375/LT1376
APPLICATIO
S I
FOR
ATIO
U
W
U
U
+
+
2.38V
0.4V
GND
V
SW
LT1375/LT1376
INPUT
R
FB
R
HI
1375/76 F04
OUTPUT
SHDN
STANDBY
IN
TOTAL
SHUTDOWN
3.5
μ
A
R
LO
C1
+
Figure 4. Undervoltage Lockout
or latch low under low source voltage conditions. UVLO
prevents the regulator from operating at source voltages
where these problems might occur.
Threshold voltage for lockout is about 2.38V, slightly less
than the internal 2.42V reference voltage. A 3.5
μ
A bias
current flows out of the pin at threshold. This internally
generated current is used to force a default high state on
the shutdown pin if the pin is left open. When low shut-
down current is not an issue, the error due to this current
can be minimized by making R
LO
10k or less. If shutdown
current is an issue, R
LO
can be raised to 100k, but the error
due to initial bias current and changes with temperature
should be considered.
R
k
R
R
V
V
V R
A
LO
HI
LO
IN
LO
=
(
)
=
(
)
(
)
10
238
238
35
to 100k 25k suggested
V
IN
= Minimum input voltage
Keep the connections from the resistors to the shutdown
pin short and make sure that interplane or surface capaci-
tance to the switching nodes are minimized. If high resis-
tor values are used, the shutdown pin should be bypassed
with a 1000pF capacitor to prevent coupling problems
from the switch node. If hysteresis is desired in the
undervoltage lockout point, a resistor R
FB
can be added to
the output node. Resistor values can be calculated from:
R
R
V V
V
R
)
A
R
R
V
V
HI
LO IN
OUT
FB
HI
OUT
=
+
)
(
)
+
[
]
(
=
( )(
238
1
238
/
2 35
.
μ
25k suggested for R
LO
V
IN
= Input voltage at which switching stops as input
voltage descends to trip level
V = Hysteresis in input voltage level
Example: output voltage is 5V, switching is to stop if input
voltage drops below 12V and should not restart unless
input rises back to 13.5V.
V is therefore 1.5V and V
IN
=
12V. Let R
LO
= 25k.
[
(
(
(
R
k
k
A
k
k
R
k
k
HI
FB
=
+
(
)
+
)
]
=
)
=
)
=
=
25 12 238 15 5 1
.
15
238 25 35
.
25 1041
229
.
114
114 5 15
380
. /
.
.
/ .
μ
SWITCH NODE CONSIDERATIONS
For maximum efficiency, switch rise and fall times are
made as short as possible. To prevent radiation and high
frequency resonance problems, proper layout of the com-
ponents connected to the switch node is essential. B field
相關(guān)PDF資料
PDF描述
LT1375I RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
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