參數(shù)資料
型號(hào)： LT1505
廠商： Linear Technology Corporation
英文描述： Constant-Current/Voltage High Efficiency Battery Charger
中文描述： Constant-Current/Voltage高效電池充電器
文件頁(yè)數(shù)： 4/16頁(yè)
文件大?。?/td> 214K
代理商： LT1505
4
LT1505
Note 6:
See “Lithium-Ion Charging Completion” in the Applications
Information Section.
Note 7:
Tested with Test Circuit 3.
Note 8:
I
SPIN
keeps switching on to keep V
BAT
regulated when battery is
not present to avoid high surge current from C
OUT
when battery is
inserted.
Note 9:
Above undervoltage threshold switching is enabled.
Note 10:
Do not connect V
CC
directly to V
IN
(see Figure 1). This connection
will cause the internal diode between V
BAT
and V
CC
to be forward-biased
and may cause high current to flow from V
IN
. When the adapter is
removed, V
CC
will be held up by the body diode of M1.
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
Tested with Test Circuit 1.
Note 3:
Tested with Test Circuit 2.
Note 4:
When V
CC
and battery voltage differential is low, high duty factor
is required. The LT1505 achieves a duty factor greater than 99% by
skipping cycles. Only when V
BOOST
drops below the comparator A2
threshold will TGATE be turned off. See Applications Information.
Note 5:
When the system starts, C2 (boost cap) has to be charged up to
drive TGATE and to start the system. The LT1505 will keep TGATE off and
turn BGATE on for 0.2
μ
s at 200kHz to charge up C2. Comparator A2
senses V
BOOST
and switches to the normal PWM mode when V
BOOST
is
above the threshold.
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at T
A
= 25
°
C. V
CC
= 18V, V
BAT
= 12.6V, V
CLN
= V
CC
(LT1505), no load on any
outputs unless otherwise noted.
The
G
denotes specifications which apply over the full operating
PARAMETER
Voltage Amplifier VA
Transconductance (Note 3)
Output Source Current
V
FB
Input Bias Current
CONDITIONS
MIN
TYP
MAX
UNITS
Output Current from 50
μ
A to 500
μ
A
V
FB
= V
PROG
= V
REF
+ 10mV
At 0.5mA VA Output Current, T
A
= 25
°
C
At 0.5mA VA Output Current, T
A
= 70
°
C
(3 CELL, 4.1V, 4.2V Are Not Connected, V
BAT2
= 0V)
0.21
1.1
0.6
1.0
mho
mA
nA
nA
±
3
±
10
25
–10
Current Limit Amplifier CL1
Turn-On Threshold
Transconductance
CLP Input Current
CLN Input Current
Input P-Channel FET Driver (INFET)
INFET “On” Clamping Voltage (V
CC
– V
INFET
)
INFET “On” Driver Current
INFET “Off” Clamping Voltage (V
CC
– V
INFET
)
INFET “Off” Drive Current
Charging Completion Flag (Comparator E6)
Charging Completion Threshold (Note 6)
Threshold On CAP Pin
0.5mA Output Current
Output Current from 50
μ
A to 500
μ
A
0.5mA Output Current
0.5mA Output Current
87
0.5
92
1
1
0.8
97
3
3
2
mV
mho
μ
A
mA
V
CC
≥
11V
V
INFET
= V
CC
– 6V
V
CC
Not Connected, I
INFET
< –2
μ
A
V
CC
Not Connected, (V
CC
– V
INFET
)
≥
2V
G
6.5
8
7.8
20
9
V
G
mA
1.4
V
–2.5
mA
Measured at V
RS1
, V
CAP
= 2V (Note 7)
Low to High Threshold
High to Low Threshold
V
SHDN
= Low (Shutdown)
V
CAP
= 4V, I
FLAG
< 1mA
V
CAP
= 0.6V
14
20
3.3
28
4.2
mV
G
G
V
V
V
V
0.6
V
CAP
at Shutdown
FLAG (Open Collector) Output Low
FLAG Pin Leakage Current
Gate Drivers (TGATE, BGATE)
V
GBIAS
G
0.13
0.3
0.3
3
G
G
μ
A
11V < V
CC
< 24V, I
GBIAS
≤
15mA
V
SHDN
= Low (Shutdown)
I
TGATE
≤
20mA, V
BOOST
= V
GBIAS
– 0.5V
I
BGATE
≤
20mA
I
TGATE
≤
50mA
I
BGATE
≤
50mA
10nF Load
1nF Load
V
SHDN
= Low (Shutdown)
I
TGATE
= I
BGATE
= 10
μ
A
G
G
8.4
8.9
1
6.6
7.2
9.3
3
V
V
V
V
V
V
A
V
TGATE
High (V
TGATE
– V
SW
)
V
BGATE
High
V
TGATE
Low (V
TGATE
– V
SW
)
V
BGATE
Low
Peak Gate Drive Current
Gate Drive Rise and Fall Time
V
TGATE
, V
BGATE
at Shutdown
G
5.6
6.2
G
G
0.8
0.8
G
1
25
ns
V
G
1
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