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參數(shù)資料
| 型號： | LT1806IS6 |
| 元件分類： | 運算放大器 |
| 英文描述： | Voltage-Feedback Operational Amplifier |
| 中文描述： | 電壓反饋運算放大器 |
| 文件頁數(shù)： | 24/24頁 |
| 文件大?。?/td> | 314K |
| 代理商： | LT1806IS6 |
LT1806/LT1807
24
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
G
FAX: (408) 434-0507
G
www.linear-tech.com
LINEAR TECHNOLOGY CORPORATION 2000
18067f LT/LCG 1200 4K PRINTED IN USA
PART NUMBER
LT1395
LT1399
LT1632/LT1633
DESCRIPTION
400MHz Current Feedback Amplifier
Triple 300MHz Current Feedback Amplifier
Dual/Quad 45MHz, 45V/
μ
s Rail-to-Rail Input and Output Amplifiers
COMMENTS
800V/
μ
s Slew Rate, Shutdown
0.1dB Gain Flatness to 150MHz, Shutdown
High DC Accuracy 1.35mV V
OS(MAX)
, 70mA Output Current,
Max Supply Current 5.2mA/Amp
350V/
μ
s Slew Rate, Shutdown, Low Distortion –90dBc at 5MHz
LT1809/LT1810
Single/Dual 180MHz Input and Output Rail-to-Rail Amplifiers
TYPICAL APPLICATIO
U
RELATED PARTS
FET Input, Fast, High Gain Photodiode Amplifier
Figure 10 shows a fast, high gain transimpedance ampli-
fier applied to a photodiode. A JFET buffer is used for its
extremely low input bias current and high speed. The
LT1097 and 2N3904 keep the JFET biased at I
DSS
for zero
offset and lowest voltage noise. The JFET then drives the
LT1806, with R
F
closing the high speed loop back to the
JFET input and setting the transimpedance gain. C4 helps
improve the phase margin of the fast loop. Output voltage
noise density was measured as 9nV/
√
Hz with R
F
short
circuited. With R
F
varied from 100k to 1M, total output
noise was below 1mV
RMS
measured over a 10MHz
bandwidth. Table 4 shows results achieved with various
values of R
F
and Figure 11 shows the time domain
response with R
F
= 499k.
Table 4. Results Achieved for Various R
F
, 1.2V Output Step
10% to 90%
R
F
RISE TIME
100k
64ns
200k
94ns
499k
154ns
1M
263ns
–3dB
BANDWIDTH
6.8MHz
4.6MHz
3MHz
1.8MHz
–
+
R3
10k
R1
10M
SIEMENS/
INFINEON
SFH213FA
PHOTODIODE
R2
1M
R
F
49.9
50
18067 F10
R5
33
R4
2.4k
3
6
4
7
V
S+
V
S–
V
S–
2
C2
2200pF
C3
0.1
μ
F
C1
100pF
C4
3pF
LT1097
–
+
2
6
4
7
V
OUT
*
2N5486
V
S+
V
S+
V
S–
V
S–
3
LT1806
2N3904
*ADJUST PARASITIC CAPACITANCE AT
R
FOR DESIRED RESPONSE
CHARACTERISTICS
V
S
=
±
5V
Figure 10. Fast, High Gain Photodiode Amplifier
100mV/DIV
200ns/DIV
18067 F11
Figure 11. Step Response with R
F
= 499k
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