(408) 432-1900
參數(shù)資料
型號: LT1807IS8#PBF
廠商: Linear Technology
文件頁數(shù): 21/28頁
文件大?。?/td> 0K
描述: IC OPAMP R-R I/O DUAL LN 8SOIC
標準包裝: 100
放大器類型: 通用
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 140 V/µs
增益帶寬積: 325MHz
電流 - 輸入偏壓: 5µA
電壓 - 輸入偏移: 100µV
電流 - 電源: 11mA
電流 - 輸出 / 通道: 85mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 12.6 V,±1.25 V ~ 6.3 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SO
包裝: 管件
產(chǎn)品目錄頁面: 1319 (CN2011-ZH PDF)
LT1806/LT1807
28
18067fc
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 2000
LT 0809 REV C PRINTED IN USA
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT1395
400MHz Current Feedback Amplier
800V/μs Slew Rate, Shutdown
LT1399
Triple 300MHz Current Feedback Amplier
0.1dB Gain Flatness to 150MHz, Shutdown
LT1632/LT1633
Dual/Quad 45MHz, 45V/μs Rail-to-Rail Input and Output Ampliers
High DC Accuracy 1.35mV VOS(MAX), 70mA Output Current,
Max Supply Current 5.2mA/Amp
LT1809/LT1810
Single/Dual 180MHz Input and Output Rail-to-Rail Ampliers
350V/μs Slew Rate, Shutdown, Low Distortion –90dBc at 5MHz
LT1812/LT1813
3mA, 100MHz, 750V/μs Op Amp
High Slew Rate
LT1818/LT1819
9mA, 400MHz, 2500V/μs Op Amp
Ultrahigh Slew Rate
LT6200/LT6201
165MHz Rail-to-Rail Input and Output, 0.95nV/√Hz Low Noise
Op Amp
Lowest Noise
LT6202/LT6203
100MHz Rail-to-Rail Input and Output, 1.9nV/√Hz Op Amp
ICC = 2.5mA
TYPICAL APPLICATION
FET Input, Fast, High Gain Photodiode Amplier
Figure 10 shows a fast, high gain transimpedance
amplier applied to a photodiode. A JFET buffer is used
for its extremely low input bias current and high speed.
The LT1097 and 2N3904 keep the JFET biased at IDSS
for zero offset and lowest voltage noise. The JFET then
drives the LT1806, with RF closing the high speed loop
back to the JFET input and setting the transimpedance
gain. C4 helps improve the phase margin of the fast loop.
Output voltage noise density was measured as 9nV/√Hz
with RF short circuited. With RF varied from 100k to 1M,
total output noise was below 1mVRMS measured over a
10MHz bandwidth. Table 4 shows results achieved with
various values of RF and Figure 11 shows the time domain
response with RF = 499k.
Table 4. Results Achieved for Various RF, 1.2V Output Step
RF
10% to 90%
RISE TIME
–3dB
BANDWIDTH
100k
64ns
6.8MHz
200k
94ns
4.6MHz
499k
154ns
3MHz
1M
263ns
1.8MHz
Figure 10. Fast, High Gain Photodiode Amplier
+
R3
10k
R1
10M
SIEMENS/
INFINEON
SFH213FA
PHOTODIODE
R2
1M
RF
49.9Ω
50W
18067 F10
R5
33Ω
R4
2.4k
3
6
4
7
VS
+
VS
VS
2
C2
2200pF
C3
0.1μF
C1
100pF
C4
3pF
LT1097
+
2
6
4
7
VOUT
*
2N5486
VS
+
VS
+
VS
VS
3
LT1806
2N3904
*ADJUST PARASITIC CAPACITANCE AT
RF FOR DESIRED RESPONSE
CHARACTERISTICS
VS = 5V
Figure 11. Step Response
with RF = 499k
20ns/DIV
100mV/DIV
18067 F11
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