參數(shù)資料
型號(hào)： LT4351IMS
廠商： LINEAR TECHNOLOGY CORP
元件分類： MOSFETs
英文描述： MOSFET Diode-OR Controller
中文描述： 0.67 A BUF OR INV BASED MOSFET DRIVER, PDSO10
封裝： PLASTIC, MSOP-10
文件頁(yè)數(shù)： 12/20頁(yè)
文件大?。?/td> 270K
代理商： LT4351IMS
LT4351
12
sn4351 4351fs
As an example, for 500nH of inductance and R
ESR
of about
100m
, then:
C
nF
F
≥
=
μ
4 500
0 1
200
2
.
Check vendor data for ESR and iterate to get the best
value. Additional C
B
capacitance may be required for load
concerns.
If the boost regulator is being used, place a 10
μ
F low ESR
ceramic capacitor from V
IN
to GND. Place a 10
μ
F and a
0.1
μ
F ceramic capacitor close to V
IN
and GND. These
capacitors should have low ESR (less than 10m
for the
10
μ
F and 40m
for the 0.1
μ
F). These capacitors help to
eliminate problems associated with noise produced by the
boost regulator. They are decoupled from the V
IN
supply
by a small 1
resistor as shown in Figure 8. The LT4351
will perform better with a small ceramic capacitor (10
μ
F)
on OUT to GND.
Back-to-back MOSFETs prevent the MOSFET body diode
from passing current.
Use a single MOSFET if current flow is allowable from
input to output when the input supply is above the output
(limited overvoltage protection). In this case the MOSFET
should have a source on the input side so the body diode
conducts current to the load. Back-to-back MOSFETs are
normally connected with their sources tied together to
provide added protection against exceeding maximum
gate to source voltage.
Selection of MOSFETs should be based on R
DS(ON)
, BV
DSS
and BV
GSS
. BV
DSS
should be high enough to prevent
breakdown when V
IN
or OUT are at their maximum value.
R
DS(ON)
should be selected to keep within the MOSFET
power rating at the maximum load current (I
2
R
DS(ON)
)
BV
GSS
should be at least 8V. The LT4351 will clamp the
GATE to 7.5V above the lesser of V
IN
or OUT. For back-to-
back MOSFETs where sources are tied together, this
allows the use of MOSFETs with a VGS max rating of 8V or
more. If a single MOSFET is used, care must be taken to
ensure the VGS max rating is not exceeded. When the
MOSFET is turned off, the GATE voltage is near ground, the
source at V
IN
. Thus, MOSFET VGS max must be greater
than V
IN(MAX)
.
If a single MOSFET is used with source to V
IN
, then BV
GSS
should be greater than the maximum V
IN
since the MOSFET
gate is at 0.2V when off.
The gate drive amplifier will attempt to regulate the
voltage across the MOSFETs to 15mV. Regulation will be
achieved if:
mV
I
LOAD
2
mV
I
LOAD
This requires very low R
DS
values. This may be achieved
by paralleling MOSFETs, but be careful to keep intercon-
nection trace resistance low. In the event that regulation
cannot be achieved, the gate drive amplifier will drive
GATE to its clamp and achieve the best R
DS
possible at that
level.
R
DS
<
15
for two MOSFETs and
R
DS
<
15
for a single MOSFET
APPLICATIOU
W
U
U
Figure 8. V
IN
Capacitors
External Boost Supply
The V
DD
pin may be powered by an external supply. In this
case, simply omit the boost regulator inductor and diode
and leave the SW pin open. Suitable V
DD
capacitance
(minimum of a 1
μ
F ceramic) should remain due to the cur-
rent pulses required for the gate driver.
The V
DD
current consists of 3.5mA of DC current with the
current required to charge the MOSFET’s gate which is de-
pendent on the gate charge required and frequency of
switching. Typically the average current will be under 10mA.
MOSFET Selection
The LT4351 uses either a single N-channel MOSFET or
back-to-back N-channel MOSFETs as the pass element.
V
IN
1
C
V3
10
μ
F
C
V1
10
μ
F
C
B
L
IN
PARASITIC
C
V2
0.1
μ
F
V
IN
GATE
LT4351
4351 F08
GND
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LT4351IMS#PBF 功能描述:IC CTLR MOSFET DIODE-OR 10MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
LT4351IMS#TR 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
LT4351IMS#TRPBF 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
LT4352 制造商:LINER 制造商全稱:Linear Technology 功能描述:High Voltage Surge
LT4356 制造商:LINER 制造商全稱:Linear Technology 功能描述:High Voltage Surge
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