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參數(shù)資料
| 型號： | LT6552IS8#TR |
| 廠商： | Linear Technology |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP VID DIFF SGL 3.3V 8SOIC |
| 標準包裝： | 2,500 |
| 應用： | 差分 |
| 電路數(shù)： | 1 |
| -3db帶寬： | 75MHz |
| 轉(zhuǎn)換速率： | 600 V/µs |
| 電流 - 電源： | 14mA |
| 電流 - 輸出 / 通道： | 70mA |
| 電壓 - 電源，單路/雙路(±)： | 3 V ~ 12.6 V，±1.5 V ~ 6.3 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 8-SOIC |
| 包裝： | 帶卷 (TR) |
LT6552
5
6552f
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VOS
Input Offset Voltage
Both Inputs (Note 7)
10
25
mV
q
30
mV
VOS/T
Input VOS Drift
q
50
V/°C
IB
Input Bias Current
Any Input
q
25
50
A
IOS
Input Offset Current
Either Input Pair
q
15
A
en
Input Noise Voltage Density
f = 10kHz
55
nV/
√Hz
in
Input Noise Current Density
f = 10kHz
0.7
pA/
√Hz
RIN
Input Resistance
Common Mode, VCM = –5V to 3V
300
k
CMRR
Common Mode Rejection Ratio
VCM = –5V to 3V
q
58
75
dB
Input Range
q
–5
3
V
PSRR
Power Supply Rejection
VS = ±2V to ±6V, VCM = 0V
q
48
54
dB
GE
Gain Error
VO = –3V to 3V, RL = 1k
q
13
%
RL = 150
q
13
%
Output Voltage Swing
(VDIFF = ± 0.6V), VREF (Pin 1) = 0V, AV = 10
RL = 1k
q
±4.8
±4.875
V
RL = 150
q
±3.6
±4.3
V
RL = 75, 0°C ≤ TA ≤ 70°C (Only)
q
±2.75
±3.4
V
SR
Slew Rate
VCM = 0V, VDIFF = –1.5V to +1.5V,
400
600
V/
s
VO = –5V to 5V Measure from –2V to 2V, RL = 150
FPBW
Full-Power Bandwidth
VO = 6VP-P (Note 9)
30
MHz
BW
Small-Signal –3dB Bandwidth
AV = 2, RL = 150
75
MHz
tr, tf
Rise Time, Fall Time
AV = 50, VO = –3V to 3V, 20% to 80%
125
175
ns
tS
Settling Time to 3%
AV = 2, VOUT = 6V, Positive Step
25
ns
Settling Time to 1%
RL = 150
35
ns
Differential Gain
AV = 2, RL = 150, Output Black Level = 0V
0.2
%
Differential Phase
AV = 2, RL = 150, Output Black Level = 0V
0.15
Deg
ISC
Short-Circuit Current
VOUT = 0V, VDIFF = ±1V
50
70
mA
0
°C ≤ TA ≤ 70°C
q
45
mA
–40
°C ≤ TA ≤ 85°C
q
35
mA
Supply Current Shutdown
VSHDN = –4.5V
q
650
1400
A
IS
Supply Current
14
16.5
mA
q
18.5
mA
VL
Shutdown Pin Input Low Voltage
q
–4.5
V
VH
Shutdown Pin Input High Voltage
q
4.7
V
±5V ELECTRICAL CHARACTERISTICS
5V ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
tON
Turn-On Time
VSHDN from 0.5V to 4.7V
250
ns
tOFF
Turn-Off Time
VSHDN from 4.7V to 0.5V
450
ns
Shutdown Output Leakage Current
VSHDN = 0.5V, 0V ≤ VOUT ≤ V+
q
0.25
A
The q denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = 5V, 0V. Figure 1 shows the DC test circuit, VREF = VCM = 1V,
VDIFF = 0V, VSHDN = V
+, unless otherwise noted. RL = RF + RG = 1k. (Note 6)
The q denotes the specifications which apply over the full operat-
ing temperature range, otherwise specifications are at TA = 25°C. VS = ±5V. Figure 2 shows the DC test circuit, VREF = VCM = 0V,
VDIFF = 0V, VSHDN = V+, unless otherwise noted. RL = RF + RG = 1k. (Note 6)
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