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參數(shù)資料
| 型號(hào)： | LTC1157CS8 |
| 廠(chǎng)商： | LINEAR TECHNOLOGY CORP |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 221K |
| 代理商： | LTC1157CS8 |
5
LTC1157
APPLICATIU
MOSFET Selection
The LTC1157 is designed to operate with both standard
and logic level N-channel MOSFET switches. The choice of
switch is determined primarily by the operating supply
voltage.
W
U
U
Logic Level MOSFET Switches at 3.3V
Logic level switches should be used with the LTC1157
when powered from 2.7V to 4V. Although there is some
variation among manufacturers, logic level MOSFET
switches are typically rated with V
GS
= 4V with a maximum
continuous V
GS
rating of
±
10V. R
DS(ON)
and maximum
V
DS
ratings are similar to standard MOSFETs and there is
generally little price differential. Logic level MOSFETs are
frequently designated by an “L” and are usually available
in surface mount packaging. Some logic level MOSFETs
are rated up to
±
15V and can be used in applications which
require operation over the entire 2.7V to 5.5V range.
Standard MOSFET Switches at 5V
Standard N-channel MOSFET switches should be used
with the LTC1157 when powered from 4V to 5.5V supply
as the built-in charge pump produces ample gate drive to
fully enhance these switches when powered from a 5V
nominal supply. Standard N-channel MOSFET switches
are rated with V
GS
= 10V and are generally restricted to a
maximum of
±
20V.
Powering Large Capacitive Loads
Electrical subsystems in portable battery-powered equip-
ment are typically bypassed with large filter capacitors to
reduce supply transients and supply induced glitching. If
not properly powered however, these capacitors may
themselves become the source of supply glitching.
For example, if a 100
μ
F capacitor is powered through a
switch with a slew rate of 0.1V/
μ
s, the current during start-
up is:
I
START
= C(dV/dt)
= (100
×
10
–6
) (1
×
10
5
)
= 10A
Obviously, this is too much current for the regulator (or
output capacitor) to supply and the output will glitch by as
much as a few volts.
The start-up current can be substantially reduced by
limiting the slew rate at the gate of an N-channel switch as
shown in Figure 1. The gate drive output of the LTC1157
is passed through a simple RC network, R1 and C1, which
substantially slows the slew rate of the MOSFET gate to
approximately 1.5
×
10
–4
V/
μ
s. Since the MOSFET is
operating as a source follower, the slew rate at the source
is essentially the same as that at the gate, reducing the
start-up current to approximately 15mA which is easily
managed by the system regulator. R2 is required to
eliminate the possibility of parasitic MOSFET oscillations
during switch transitions. Also, it is good practice to
isolate the gates of paralleled MOSFETs with 1k resistors
to decrease the possibility of interaction between switches.
Reverse Battery Protection
The LTC1157 can be protected against reverse battery
conditions by connecting a 300
resistor in series with
the ground pin. The resistor limits the supply current to
less than 12mA with –3.6V applied. Since the LTC1157
draws very little current while in normal operation, the
drop across the ground resistor is minimal. The 3.3V
μ
P
(or control logic) can be protected by adding 10k resistors
in series with the input pins.
+
V
S
GND
G1
IN1
1/2 LTC1157
MTD3055EL
3.3
μ
F
V
IN
LTC1157 TA02
LT1129-3.3
+
3.3V
LOAD
C1
0.1
μ
F
C
LOAD
100
μ
F
3.3V
R2
1k
R1
100k
ON/0FF
Figure 1. Powering a Large Capacitive Load
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相關(guān)代理商/技術(shù)參數(shù) |
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| LTC1157CS8#PBF | 功能描述:IC MOSFET DRIVER 3.3V DUAL 8SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類(lèi)型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF) |
| LTC1157CS8#TR | 功能描述:IC DRIVER MOSFET 3.3V DUAL 8SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LTC1157CS8#TRPBF | 功能描述:IC MOSFET DRIVER 3.3V DUAL 8SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LTC1159 | 制造商:LINER 制造商全稱(chēng):Linear Technology 功能描述:High Efficiency Synchronous Step-Down Switching Regulators |
| LTC1159_01 | 制造商:LINER 制造商全稱(chēng):Linear Technology 功能描述:High Efficiency Synchronous Step-Down Switching Regulators |
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